Aluminum nitride/silicon carbide multilayer heterostructure produced by plasma‐assisted, gas‐source molecular beam epitaxy

1993 ◽  
Vol 62 (25) ◽  
pp. 3333-3335 ◽  
Author(s):  
L. B. Rowland ◽  
R. S. Kern ◽  
S. Tanaka ◽  
Robert F. Davis
Keyword(s):  
Silicon Carbide ◽  
Molecular Beam Epitaxy ◽  
Aluminum Nitride ◽  
Molecular Beam ◽  
Gas Source

Aluminum nitride-silicon carbide solid solutions grown by plasma-assisted, gas-source molecular beam epitaxy

1998 ◽  
Vol 13 (7) ◽  
pp. 1816-1822 ◽  
Author(s):  
R. S. Kern ◽  
L. B. Rowland ◽  
S. Tanaka ◽  
R. F. Davis
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Silicon Carbide ◽  
Molecular Beam Epitaxy ◽  
Aluminum Nitride ◽  
Solid Solutions ◽  
Molecular Beam ◽  
High Energy ◽  
Gas Source ◽  
Electron Spectrometry

Solid solutions of aluminum nitride (AlN) and silicon carbide (SiC) have been grown at 900–1300 °C on vicinal α (6H)-SiC(0001) substrates by plasma-assisted, gas-source molecular beam epitaxy. Under specific processing conditions, films of (AlN)x(SiC) 1−x with 0.2 ≤ x ≤ 0.8, as determined by Auger electron spectrometry (AES), were deposited. Reflection high-energy electron diffraction (RHEED) was used to determine the crystalline quality, surface character, and epilayer polytype. Analysis of the resulting surfaces was also performed by scanning electron microscopy (SEM). High-resolution transmission electron microscopy (HRTEM) revealed that monocrystalline films with x ≥ 0.25 had the wurtzite (2H) crystal structure; however, films with x < 0.25 had the zincblende (3C) crystal structure.

Reaction kinetics of silicon carbide deposition by gas-source molecular-beam epitaxy

1998 ◽  
Vol 183 (4) ◽  
pp. 581-593 ◽  
Author(s):  
R.S. Kern ◽  
S. Tanaka ◽  
L.B. Rowland ◽  
R.F. Davis
Keyword(s):  
Silicon Carbide ◽  
Molecular Beam Epitaxy ◽  
Reaction Kinetics ◽  
Molecular Beam ◽  
Gas Source ◽  
Kinetics Of

High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source ◽  
Semiconductor Quantum Well
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