Shallow donor in separation by implantation of oxygen structures revealed by electric‐field modulated electron spin resonance

1993 ◽  
Vol 62 (3) ◽  
pp. 273-275 ◽  
Author(s):  
K. Vanheusden ◽  
A. Stesmans
Keyword(s):  
Electron Spin Resonance ◽  
Electric Field ◽  
Electron Spin ◽  
Shallow Donor ◽  
Spin Resonance

Shallow Donor States in InP - Electron-Spin-Resonance Induced Overhauser Shift -

1993 ◽  
Vol 117-118 ◽  
pp. 369-374 ◽  
Author(s):  
Kenji Murakami ◽  
Takasumi Ohyanagi ◽  
Kazusato Hara ◽  
K. Masuda
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Shallow Donor ◽  
Spin Resonance ◽  
Donor States

scholarly journals Paramagnetic defects in GaN

1998 ◽  
Vol 3 ◽  
Author(s):  
M. Palczewska ◽  
B. Suchanek ◽  
R. Dwili˜ski ◽  
K. Paku ,a ◽  
A. Wagner ◽  
...  
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Shallow Donor ◽  
Resonance Signal ◽  
Electrical Measurements ◽  
Deep Acceptor ◽  
Isotropic Line ◽  
Spin Resonance ◽  
P Type ◽  
Mg Doped

In this work, paramagnetic defects in wurtzite GaN crystals were systematically studied using the Electron Spin Resonance (ESR) technique and using electrical measurements. Three different resonance signals were found. The first had g|| = 1.9514 ± 0.0005 and g⊥ = 1.9486 ± 0.0005, a commonly observed defect in n-type crystals ascribed to the shallow donor of GaN [1]. The second ESR signal, an anisotropic line of g|| = 2.0728 ± 0.0015 and g⊥ = 1.9886 ± 0.0015, was observed only in Mg-doped p-type GaN layers, and was assigned to the Mg acceptor. The last ESR resonance signal, an isotropic line with g = 2.0026 ± 0.0005 was observed only in AMMONO GaN crystals after thermal annealing, as well as in Mg-doped GaN epitaxial layers. It was tentatively identified as due to a deep acceptor.

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