Low‐threshold InGaAs/GaAs/AlGaAs quantum‐well laser with an intracavity optical modulator by impurity‐induced disordering

1993 ◽  
Vol 62 (6) ◽  
pp. 556-558 ◽  
Author(s):  
W. X. Zou ◽  
D. B. Young ◽  
K‐K. Law ◽  
J. L. Merz
1996 ◽  
Vol 450 ◽  
Author(s):  
P. Cusumano ◽  
A. Saher Helmy ◽  
B. S. Ooi ◽  
R. M. De La Rue ◽  
A. C. Bryce ◽  
...  

ABSTRACTA spatially selective quantum well intermixing process, using phosphorus-doped silica (SiO2:P) containing 5 wt% P to inhibit intermixing and pure SiO2 to enhance intermixing, is presented. The SiO2:P cap has been found to suppress bandgap shifts in both p-i-n and n-i-p GaAs/AlGaAs quantum well laser structures, with bandgap shift differences as large as 100 meV observed from samples capped with SiO2 and with SiO2:P after rapid thermal processing at temperatures as high as 950 °C for 60 s. Extended cavity ridge lasers exhibited low threshold currents with TE losses of 3.2 cm−1 measured in the passive waveguide sections at the lasing wavelength using the Fabry-Perot resonance method. This value is among the lowest reported so far using an impurity-free disordering technique.


Author(s):  
J. S. Osinski ◽  
P. Grodzinski ◽  
Y. Zou ◽  
P. D. Dapkus

1988 ◽  
Vol 53 (15) ◽  
pp. 1378-1380 ◽  
Author(s):  
I. Suemune ◽  
L. A. Coldren ◽  
M. Yamanishi ◽  
Y. Kan

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