Time‐resolved luminescence study of ultrafast carrier transport in GaAs metal‐semiconductor‐metal devices

1993 ◽  
Vol 62 (7) ◽  
pp. 732-734 ◽  
Author(s):  
R. Kersting ◽  
J. Plettner ◽  
K. Leo ◽  
S. Averin ◽  
H. Kurz
2006 ◽  
Vol 910 ◽  
Author(s):  
Steve Reynolds

AbstractThe use of transient photoconductivity techniques in the investigation of carrier transport in microcrystalline silicon is described. Results are presented which highlight variations in transport parameters such as carrier mobility and density of states with structure composition. Hole mobility is significantly enhanced by crystalline content in the film of 10% or less. The density of states inferred from transport measurements parallel to and at right angles to the direction of film growth differ somewhat, suggesting that transport may be anisotropic.


2020 ◽  
Vol 234 (4) ◽  
pp. 699-717
Author(s):  
James Hirst ◽  
Sönke Müller ◽  
Daniel Peeters ◽  
Alexander Sadlo ◽  
Lukas Mai ◽  
...  

AbstractThe temporal evolution of photogenerated carriers in CuWO4, CuO and WO3 thin films deposited via a direct chemical vapor deposition approach was studied using time-resolved microwave conductivity and terahertz spectroscopy to obtain the photocarrier lifetime, mobility and diffusion length. The carrier transport properties of the films prepared by varying the copper-to-tungsten stoichiometry were compared and the results related to the performance of the compositions built into respective photoelectrochemical cells. Superior carrier mobility was observed for CuWO4 under frontside illumination.


1998 ◽  
Vol 42 (7-8) ◽  
pp. 1319-1323 ◽  
Author(s):  
Tsuyoshi Okuno ◽  
Hong-Wen Ren ◽  
Mitsuru Sugisaki ◽  
Kenichi Nishi ◽  
Shigeo Sugou ◽  
...  

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Mario Borgwardt ◽  
Stefan T. Omelchenko ◽  
Marco Favaro ◽  
Paul Plate ◽  
Christian Höhn ◽  
...  

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