Effect of post‐growth cooling ambient on acceptor passivation in carbon‐doped GaAs grown by metalorganic chemical vapor deposition

1993 ◽  
Vol 62 (11) ◽  
pp. 1248-1250 ◽  
Author(s):  
S. A. Stockman ◽  
A. W. Hanson ◽  
S. L. Jackson ◽  
J. E. Baker ◽  
G. E. Stillman
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Carbon Doped ◽  
Metalorganic Chemical

Investigation of Carbon Incorporation into GaAs by TEGa-AsH3 Based Low Pressure Metalorganic Chemical Vapor Deposition

1993 ◽  
Vol 300 ◽  
Author(s):  
M. S. Feng ◽  
H. D. Chen ◽  
C. H. Wu
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Dopant Concentration ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Carbon Incorporation ◽  
Carbon Doped ◽  
Gaas Films ◽  
Metalorganic Chemical

ABSTRACTHeavily Carbon doped GaAs(l×1018−1×1020cm−3 ) grown by low pressure metalorganic chemical vapor deposition(LPMOCVD) using triethylgallium(TEGa), arsine(AsH3) as sources and liquid carbon-tetrachoride(CCI4) as dopant has been investigated. The carrier concentration was verified at various growth temperatures, V/III ratios and CCI4 flow rates. Dopant concentration first increased from 550°C and reached a maxium at 570°C and then decreased monotonously. Carbon incorporation was strongly enhanced when V/III ratio was less than 30 at Tg=590°C or less than 40 at Tg=630°C. Hole concentration increased and then decreased as CCI4 increased. The doping efficiency of epitaxtial layers grown on(100) substrate was higher than that on 2° off toward <110> misoriented substrate. Carbon doped GaAs films had higher Hall mobility than zinc doped GaAs films at high doping level due to less self-compensation. The highest dopant concentration in this system was 2.3×1020cm−3 at Tg=580°C and V/III=10.

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