Strain‐compensated InGaAs/GaAsP/GaInAsP/GaInP quantum well lasers (λ∼0.98 μm) grown by gas‐source molecular beam epitaxy

1993 ◽  
Vol 62 (14) ◽  
pp. 1644-1646 ◽  
Author(s):  
G. Zhang ◽  
A. Ovtchinnikov
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source

High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source ◽  
Semiconductor Quantum Well

Self‐aligned InGaAs/GaAs/InGaP quantum well lasers prepared by gas‐source molecular beam epitaxy with two growth steps

1991 ◽  
Vol 59 (23) ◽  
pp. 2929-2931 ◽  
Author(s):  
Y. K. Chen ◽  
M. C. Wu ◽  
J. M. Kuo ◽  
M. A. Chin ◽  
A. M. Sergent
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source

Strain-compensated GaInNAs/GaAsP/GaAs/GaInP quantum well lasers grown by gas-source molecular beam epitaxy

2001 ◽  
Vol 227-228 ◽  
pp. 541-544 ◽  
Author(s):  
Wei Li ◽  
Jani Turpeinen ◽  
Petri Melanen ◽  
Pekka Savolainen ◽  
Petteri Uusimaa ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source
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