Erratum: ‘‘Nanosecond laser‐driven reflection high energy electron diffraction system providing digital imaging in real time’’ [Appl. Phys. Lett. 60, 1636 (1992)]

D. Kitriotis; K. Ozasa; T. Meguro; S. Shimoda; K. Nishi; Y. Aoyagi

doi:10.1063/1.108500

Erratum: ‘‘Nanosecond laser‐driven reflection high energy electron diffraction system providing digital imaging in real time’’ [Appl. Phys. Lett. 60, 1636 (1992)]

Applied Physics Letters ◽

10.1063/1.108500 ◽

1992 ◽

Vol 61 (5) ◽

pp. 616-616

Author(s):

D. Kitriotis ◽

K. Ozasa ◽

T. Meguro ◽

S. Shimoda ◽

K. Nishi ◽

...

Keyword(s):

Electron Diffraction ◽

Real Time ◽

Digital Imaging ◽

High Energy ◽

Energy Electron ◽

Nanosecond Laser ◽

High Energy Electron

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Nanosecond laser‐driven reflection high energy electron diffraction system providing digital imaging in real time

Applied Physics Letters ◽

10.1063/1.107224 ◽

1992 ◽

Vol 60 (13) ◽

pp. 1636-1638

Author(s):

D. Kitriotis ◽

K. Ozasa ◽

T. Meguro ◽

S. Shimoda ◽

K. Nishi ◽

...

Keyword(s):

Electron Diffraction ◽

Real Time ◽

Digital Imaging ◽

High Energy ◽

Energy Electron ◽

Nanosecond Laser ◽

High Energy Electron

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Spectroscopies combined with reflection high-energy electron diffraction (RHEED) for real-time in situ surface monitoring of thin film growth

In Situ Characterization of Thin Film Growth ◽

10.1533/9780857094957.3.180 ◽

2011 ◽

pp. 180-211 ◽

Cited By ~ 1

Author(s):

P.G. Staib

Keyword(s):

Thin Film ◽

Electron Diffraction ◽

Real Time ◽

Film Growth ◽

High Energy ◽

Thin Film Growth ◽

Energy Electron ◽

High Energy Electron ◽

Surface Monitoring

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Real-time scanning microprobe reflection high-energy electron diffraction observations of the cleaning process of GaAs substrates

Journal of Crystal Growth ◽

10.1016/0022-0248(95)80191-e ◽

1995 ◽

Vol 150 ◽

pp. 110-116 ◽

Cited By ~ 6

Author(s):

Y. Morishita ◽

S. Goto ◽

Y. Nomura ◽

T. Isu ◽

Y. Katayama

Keyword(s):

Electron Diffraction ◽

Real Time ◽

High Energy ◽

Energy Electron ◽

Cleaning Process ◽

High Energy Electron ◽

Gaas Substrates ◽

Time Scanning

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Reflection high-energy electron diffraction real-time monitoring of an etch process implemented in molecular beam epitaxy technology: hydrogen chloride versus GaAs(001) epilayers

Applied Physics A ◽

10.1007/s003390050784 ◽

1998 ◽

Vol 67 (3) ◽

pp. 357-359

Author(s):

A. Hamoudi ◽

T. Sogawa ◽

T. Saitoh ◽

J. Yumoto

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Real Time ◽

Hydrogen Chloride ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Real Time Monitoring

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Real-time algorithm to determine the period and phase of Reflection High-Energy Electron Diffraction (RHEED) intensity oscillations during epitaxial growth

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2016.10.010 ◽

2017 ◽

Vol 477 ◽

pp. 50-53 ◽

Cited By ~ 1

Author(s):

Wolfgang Braun

Keyword(s):

Electron Diffraction ◽

Epitaxial Growth ◽

Real Time ◽

Time Algorithm ◽

High Energy ◽

Energy Electron ◽

High Energy Electron

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Real time analysis of self-assembled InAs/GaAs quantum dot growth by probing reflection high-energy electron diffraction chevron image

Journal of Applied Physics ◽

10.1063/1.2987469 ◽

2008 ◽

Vol 104 (7) ◽

pp. 074305 ◽

Cited By ~ 17

Author(s):

Takuya Kudo ◽

Tomoya Inoue ◽

Takashi Kita ◽

Osamu Wada

Keyword(s):

Electron Diffraction ◽

Quantum Dot ◽

Real Time ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Time Analysis ◽

Real Time Analysis ◽

Self Assembled ◽

Gaas Quantum Dot

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Real-time metrology of self assembled quantum dots by reflection high energy electron diffraction

10.1117/12.875811 ◽

2011 ◽

Cited By ~ 1

Author(s):

Alexandre Freundlich ◽

Chandani Rajapaksha

Keyword(s):

Quantum Dots ◽

Electron Diffraction ◽

Real Time ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Self Assembled

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Real-time observation of initial stages of copper film growth on silicon oxide using reflection high-energy electron diffraction

Journal of Applied Physics ◽

10.1063/1.1811785 ◽

2004 ◽

Vol 96 (12) ◽

pp. 7071-7079 ◽

Cited By ~ 28

Author(s):

Jason T. Drotar ◽

T.-M. Lu ◽

G.-C. Wang

Keyword(s):

Electron Diffraction ◽

Real Time ◽

Silicon Oxide ◽

Film Growth ◽

Copper Film ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Time Observation ◽

Real Time Observation

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Real-time scanning microprobe reflection high-energy electron diffraction observations of InGaAs surfaces during molecular-beam epitaxy on InP substrates

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.587797 ◽

1994 ◽

Vol 12 (4) ◽

pp. 2532 ◽

Cited By ~ 3

Author(s):

Y. Morishita

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Real Time ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Time Scanning ◽

Inp Substrates

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Real-time Monitoring of Si Thermal Oxidation by Auger Electron Spectroscopy Combined with Reflection High-Energy Electron Diffraction.

Hyomen Kagaku ◽

10.1380/jsssj.22.483 ◽

2001 ◽

Vol 22 (8) ◽

pp. 483-491 ◽

Cited By ~ 3

Author(s):

Yuji TAKAKUWA ◽

Fumiaki ISHIDA

Keyword(s):

Electron Diffraction ◽

Auger Electron Spectroscopy ◽

Thermal Oxidation ◽

Real Time ◽

Electron Spectroscopy ◽

Auger Electron ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Real Time Monitoring

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