Cubic boron nitride formation on Si (100) substrates at room temperature by pulsed laser deposition

1992 ◽  
Vol 61 (20) ◽  
pp. 2406-2408 ◽  
Author(s):  
T. A. Friedmann ◽  
K. F. McCarty ◽  
E. J. Klaus ◽  
D. Boehme ◽  
W. M. Clift ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Cubic Boron Nitride ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Nitride Formation

Ion‐assisted pulsed laser deposition of cubic boron nitride films

1994 ◽  
Vol 76 (5) ◽  
pp. 3088-3101 ◽  
Author(s):  
T. A. Friedmann ◽  
P. B. Mirkarimi ◽  
D. L. Medlin ◽  
K. F. McCarty ◽  
E. J. Klaus ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Pulsed Laser Deposition ◽  
Cubic Boron Nitride ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Boron Nitride Films

Electron Microscopy Study of Cubic Boron Nitride Thin Films Grown by Ion -Assisted Pulsed Laser Deposition

1993 ◽  
Vol 311 ◽  
Author(s):  
D.D. Medlin ◽  
T.T. Friedmann ◽  
P.P. Mirkarimi ◽  
K.K. Mccarty ◽  
M.M. Mills
Keyword(s):  
Boron Nitride ◽  
Pulsed Laser Deposition ◽  
Ion Beam ◽  
Cubic Boron Nitride ◽  
Pulsed Laser ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Laser Deposition ◽  
Electron Microscopic ◽  
High Fraction

ABSTRACTWe present a microstructural study of boron nitride films grown by ion-assisted pulsed laser deposition. Fourier transform infra-red spectroscopy, electron energy loss spectroscopy, and electron diffraction measurements indicate that within the irradiated region of the substrate, the film consists of high fraction of cBN with a small amount of the turbostratic phase; outside of the irradiated region, only the turbostratic phase is detected. Conventional and high resolution electron microscopic observations of the boron nitride microstructure indicate that the cBN is in the form of twinned crystallites, up to 30 nm in diameter. We also observe particulates, formed by the laser pulse, that reduce the yield of cBN in the irradiated regions by shadowing local areas from the ion beam.

Microstructure of cubic boron nitride thin films grown by ion‐assisted pulsed laser deposition

1994 ◽  
Vol 76 (1) ◽  
pp. 295-303 ◽  
Author(s):  
D. L. Medlin ◽  
T. A. Friedmann ◽  
P. B. Mirkarimi ◽  
P. Rez ◽  
M. J. Mills ◽  
...  
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Pulsed Laser Deposition ◽  
Cubic Boron Nitride ◽  
Pulsed Laser ◽  
Laser Deposition

Growth of cubic boron nitride thin films by a field-ionization source-assisted pulsed laser deposition

1995 ◽  
Vol 266 (2) ◽  
pp. 173-175 ◽  
Author(s):  
Huoping Xin ◽  
Yiqing Chen ◽  
Xiaohong Shi ◽  
Huaping Xu ◽  
Chenglu Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Pulsed Laser Deposition ◽  
Cubic Boron Nitride ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Field Ionization ◽  
Ionization Source

Pulsed laser deposition and modification of cubic boron nitride films

1998 ◽  
Vol 127-129 ◽  
pp. 444-450 ◽  
Author(s):  
S Weissmantel ◽  
G Reisse ◽  
B Keiper ◽  
A Weber ◽  
U Falke ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Pulsed Laser Deposition ◽  
Cubic Boron Nitride ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Boron Nitride Films

Preferentially Oriented Cubic Boron Nitride Films Grown on Si (001) Substrates by Ion Assisted Pulsed Laser Deposition

1992 ◽  
Vol 285 ◽  
Author(s):  
A. K. Ballal ◽  
L. Salamanca-riba ◽  
G. L. Doll ◽  
C. A. Taylor ◽  
R. Clarke
Keyword(s):  
Boron Nitride ◽  
Pulsed Laser Deposition ◽  
Cubic Boron Nitride ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Cross Sectional ◽  
Plan View ◽  
Si Substrates ◽  
Transmission Electron ◽  
Boron Nitride Films

ABSTRACTPreferentially oriented and extremely adherent cubic boron nitride films have been obtained using ion-assisted pulsed laser deposition on (001) Si substrates. The films were ∼ 1800 Å thick, optically transparent and formed an antireflective coating on the Si substrate. Infrared transmittance spectra showed a strong absorption peak at 1080 cm−1, indicating sp3 bonded film. Cross-sectional and plan-view transmission electron microscopy indicate that the cubic boron nitride films are polycrystalline having cubic zinc-blende crystal structure and a lattice constant of 3.62 Å. A preferred texture is observed with the [110] axis of cubic boron nitride parallel to [001] axis of silicon.

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