Use of electron‐beam charging for in‐process inspection of silicide complementary metal‐oxide‐semiconductor gate electrode isolation

K. A. Jenkins; P. D. Agnello; A. A. Bright

doi:10.1063/1.107922

Use of electron‐beam charging for in‐process inspection of silicide complementary metal‐oxide‐semiconductor gate electrode isolation

Applied Physics Letters ◽

10.1063/1.107922 ◽

1992 ◽

Vol 61 (3) ◽

pp. 312-314 ◽

Cited By ~ 1

Author(s):

K. A. Jenkins ◽

P. D. Agnello ◽

A. A. Bright

Keyword(s):

Electron Beam ◽

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Electrode

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Intra-Level Mix-and-Match Lithography Process for Fabricating Sub-100-nm Complementary Metal-Oxide-Semiconductor Devices using the JBX-9300FS Point-Electron-Beam System

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.6843 ◽

2000 ◽

Vol 39 (Part 1, No. 12B) ◽

pp. 6843-6848 ◽

Cited By ~ 3

Author(s):

Mitsuru Narihiro ◽

Hitoshi Wakabayashi ◽

Makoto Ueki ◽

Kohichi Arai ◽

Takashi Ogura ◽

...

Keyword(s):

Electron Beam ◽

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Lithography Process ◽

Beam System ◽

Mix And Match

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Electron-beam programming and testing of complementary metal-oxide semiconductor systems

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.583936 ◽

1987 ◽

Vol 5 (1) ◽

pp. 97 ◽

Cited By ~ 2

Author(s):

T. M. Lyszczarz

Keyword(s):

Electron Beam ◽

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Combining and matching optical, electron-beam, and x-ray lithographies in the fabrication of Si complementary metal–oxide–semiconductor circuits with 0.1 and sub-0.1 μm features

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.588257 ◽

1995 ◽

Vol 13 (6) ◽

pp. 2741 ◽

Cited By ~ 5

Author(s):

Isabel Y. Yang

Keyword(s):

Electron Beam ◽

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

X Ray ◽

Optical Electron ◽

Semiconductor Circuits

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10-nm-Scale Pattern Delineation Using Calixarene Electron Beam Resist for Complementary Metal Oxide Semiconductor Gate Etching

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.5581 ◽

2005 ◽

Vol 44 (7B) ◽

pp. 5581-5585 ◽

Cited By ~ 5

Author(s):

Mitsuru Narihiro ◽

Kohichi Arai ◽

Masahiko Ishida ◽

Yukinori Ochiai ◽

Yasutaka Natsuka

Keyword(s):

Electron Beam ◽

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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A Study of Sputtered TiN Gate Electrode Etching with Various Wet Chemicals and Post Etch Annealing for Complementary Metal–Oxide–Semiconductor Device Integration Applications

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.101203 ◽

2012 ◽

Vol 51 ◽

pp. 101203 ◽

Cited By ~ 2

Author(s):

Seung Chan Heo ◽

Dongjun Yoo ◽

Moon Suk Choi ◽

Dohyung Kim ◽

Chulwon Chung ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Electrode ◽

Device Integration

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Doping of p‐type shallow junctions using electron beam evaporation of boron layers for compatibility with complementary‐metal‐oxide‐semiconductor technology

Applied Physics Letters ◽

10.1063/1.114150 ◽

1995 ◽

Vol 66 (1) ◽

pp. 76-78 ◽

Cited By ~ 1

Author(s):

W. Zagozdzon‐Wosik ◽

D. Pan ◽

M. F. Davis ◽

I. Rusakova ◽

Z.‐H. Zhang ◽

...

Keyword(s):

Electron Beam ◽

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Electron Beam Evaporation ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Shallow Junctions ◽

P Type

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A Study of Sputtered TiN Gate Electrode Etching with Various Wet Chemicals and Post Etch Annealing for Complementary Metal–Oxide–Semiconductor Device Integration Applications

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.101203 ◽

2012 ◽

Vol 51 (10R) ◽

pp. 101203 ◽

Cited By ~ 1

Author(s):

Seung Chan Heo ◽

Dongjun Yoo ◽

Moon Suk Choi ◽

Dohyung Kim ◽

Chulwon Chung ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Electrode ◽

Device Integration

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Wide-Range Threshold Voltage Controllable Silicon on Thin Buried Oxide Integrated with Bulk Complementary Metal Oxide Semiconductor Featuring Fully Silicided NiSi Gate Electrode

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2585 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2585-2588 ◽

Cited By ~ 14

Author(s):

Takashi Ishigaki ◽

Ryuta Tsuchiya ◽

Yusuke Morita ◽

Nobuyuki Sugii ◽

Shinichiro Kimura ◽

...

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Electrode ◽

Buried Oxide ◽

Wide Range

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Threshold adjustments for complementary metal‐oxide‐semiconductor optimization using B and As focused ion beams

Applied Physics Letters ◽

10.1063/1.96738 ◽

1986 ◽

Vol 48 (10) ◽

pp. 668-669 ◽

Cited By ~ 16

Author(s):

J. Y. Lee ◽

R. L. Kubena

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Ion Beams ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Focused Ion Beams

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Air-stable n-type transistors based on assembled aligned carbon nanotube arrays and their application in complementary metal-oxide-semiconductor electronics

Nano Research ◽

10.1007/s12274-021-3567-9 ◽

2021 ◽

Author(s):

Zhen Li ◽

Katherine R. Jinkins ◽

Dingzhou Cui ◽

Mingrui Chen ◽

Zhiyuan Zhao ◽

...

Keyword(s):

Carbon Nanotube ◽

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Nanotube Arrays ◽

Carbon Nanotube Arrays ◽

Semiconductor Electronics

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