Infrared Raman study of the phonon linewidth and the nondiamond carbon phase in 〈110〉 and 〈100〉 textured polycrystalline diamond films

1992 ◽  
Vol 61 (11) ◽  
pp. 1284-1286 ◽  
Author(s):  
J. Wagner ◽  
C. Wild ◽  
W. Müller‐Sebert ◽  
P. Koidl
Keyword(s):  
Diamond Films ◽  
Polycrystalline Diamond ◽  
Carbon Phase ◽  
Raman Study ◽  
Nondiamond Carbon ◽  
Phonon Linewidth

scholarly journals 785 nm Raman Spectroscopy of CVD Diamond Films

2007 ◽  
Vol 1039 ◽  
Author(s):  
Paul William May ◽  
James A Smith ◽  
Keith N Rosser
Keyword(s):  
Raman Spectroscopy ◽  
Film Thickness ◽  
Raman Spectra ◽  
Relative Intensity ◽  
Near Infrared ◽  
Diamond Films ◽  
Polycrystalline Diamond ◽  
Cvd Diamond ◽  
Raman Study ◽  
Thin Polycrystalline

AbstractRaman spectroscopy is a powerful technique often used to study CVD diamond films, however, very little work has been reported for the Raman study of CVD diamond films using near infrared (785 nm) excitation. Here, we report that when using 785 nm excitation, the Raman spectra from thin polycrystalline diamond films exhibit a multitude of peaks (over 30) ranging from 400-3000 cm−1. These features are too sharp to be photoluminescence, and are a function of film thickness. For films >30 μm thick, freestanding films, and for films grown in diamond substrates the Raman peaks disappear, suggesting that the laser is probing the disordered small-grained interface between the diamond and substrate. Some of the peaks change in relative intensity with time (‘blinking’), and the spectra are very sensitive to position on the substrate – this is reminiscent of the behaviour seen in SERS spectra.

Characterization of homoepitaxial diamond films by Electron microscopy

1991 ◽  
Vol 49 ◽  
pp. 880-881
Author(s):  
D.P. Malta ◽  
S.A. Willard ◽  
R.A. Rudder ◽  
G.C. Hudson ◽  
J.B. Posthill ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Surface Defects ◽  
Substrate Surface ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Large Degree ◽  
Rf Plasma ◽  
Semiconducting Diamond

Semiconducting diamond films have the potential for use as a material in which to build active electronic devices capable of operating at high temperatures or in high radiation environments. A major goal of current device-related diamond research is to achieve a high quality epitaxial film on an inexpensive, readily available, non-native substrate. One step in the process of achieving this goal is understanding the nucleation and growth processes of diamond films on diamond substrates. Electron microscopy has already proven invaluable for assessing polycrystalline diamond films grown on nonnative surfaces.The quality of the grown diamond film depends on several factors, one of which is the quality of the diamond substrate. Substrates commercially available today have often been found to have scratched surfaces resulting from the polishing process (Fig. 1a). Electron beam-induced current (EBIC) imaging shows that electrically active sub-surface defects can be present to a large degree (Fig. 1c). Growth of homoepitaxial diamond films by rf plasma-enhanced chemical vapor deposition (PECVD) has been found to planarize the scratched substrate surface (Fig. 1b).

Polycrystalline Diamond Films and Single Crystal Diamonds Grown by Combustion Synthesis

CIRP Annals ◽  
1990 ◽  
Vol 39 (1) ◽  
pp. 585-588 ◽  
Author(s):  
R. Komanduri ◽  
L.L. Fehrenbacher ◽  
L.M. Hanssen ◽  
A. Morrish ◽  
K.A. Snail ◽  
...  
Keyword(s):  
Single Crystal ◽  
Combustion Synthesis ◽  
Diamond Films ◽  
Polycrystalline Diamond

Low energy ion-induced damage of polycrystalline diamond films

1994 ◽  
Vol 3 (4-6) ◽  
pp. 663-671 ◽  
Author(s):  
J. Ullmann ◽  
A. Weber ◽  
B. Mainz ◽  
J. Stiegler ◽  
T. Schuhrke
Keyword(s):  
Diamond Films ◽  
Polycrystalline Diamond ◽  
Low Energy

Investigation on the Machining of Thick Diamond Films by EDM Together with Mechanical Polishing

2007 ◽  
Vol 24-25 ◽  
pp. 377-382
Author(s):  
Rong Fa Chen ◽  
Dun Wen Zuo ◽  
Yu Li Sun ◽  
Wen Zhuang Lu ◽  
D.S. Li ◽  
...  
Keyword(s):  
Diamond Films ◽  
Polycrystalline Diamond ◽  
Mechanical Polishing ◽  
Polishing Process ◽  
Two Stage ◽  
Efficient Manner ◽  
Raman Scattering Spectroscopy ◽  
Electro Discharge Machining ◽  
Diamond Polishing ◽  
Cost Efficient

Although research on various diamond polishing techniques has been carried for years, some issues still need to be examined in order to facilitate application on large areas in a cost-efficient manner. A compositive technique for machining efficiently thick diamond films prepared by DC plasma arc jet is reported in the present paper. A two-stage polishing was applied on thick polycrystalline diamond films, by employing first electro-discharge machining (EDM) for rough polishing and subsequently mechanical polishing for finishing operations. Experimental results obtained clearly indicate the applicability of the proposed two-stage technique for fabricating transparent diamond films that can be used for the production of X-ray windows. Appropriate etching with EDM is an effective pretreatment method for enhancing the efficiency of rough polishing process in mechanical polishing of thick diamond film. The machined surfaces of diamond films are studied by Scanning Electron Microscope (SEM) and Raman Scattering Spectroscopy (Raman).

YBa2Cu3O7 Thin Films on Polycrystalline Diamond Films with Buffer Layers

1992 ◽  
Vol 275 ◽  
Author(s):  
G. Cui ◽  
C. P. Beetz ◽  
B. A. Lincoln ◽  
P. S. Kirlin
Keyword(s):  
Thin Films ◽  
Diamond Films ◽  
Rf Sputtering ◽  
Polycrystalline Diamond ◽  
Fast Response ◽  
Buffer Layers ◽  
Multichip Modules ◽  
Ir Detectors ◽  
Ybco Films ◽  
First Time

ABSTRACTThe deposition of in-situ YBa2CU3O7-δ Superconducting films on polycrystalline diamond thin films has been demonstrated for the first time. Three different composite buffer layer systems have been explored for this purpose: (1) Diamond/Zr/YSZ/YBCO, (2) Diamond/Si3N4/YSZ/YBCO, and (3) Diamond/SiO2/YSZ/YBCO. The Zr was deposited by dc sputtering on the diamond films at 450 to 820 °C. The YSZ was deposited by reactive on-axis rf sputtering at 680 to 750 °C. The Si3N4 and SiO2 were also deposited by on-axis rf sputtering at 400 to 700 °C. YBCO films were grown on the buffer layers by off-axis rf sputtering at substrate temperatures between 690 °C and 750 °C. In all cases, the as-deposited YBCO films were superconducting above 77 K. This demonstration enables the fabrication of low heat capacity, fast response time bolometric IR detectors and paves the way for the use of HTSC on diamond for interconnect layers in multichip modules.

Trap-assisted photon-enhanced thermionic emission from polycrystalline diamond films

2015 ◽  
Vol 212 (11) ◽  
pp. 2583-2588 ◽  
Author(s):  
S. Elfimchev ◽  
M. Chandran ◽  
R. Akhvlediani ◽  
A. Hoffman
Keyword(s):  
Diamond Films ◽  
Thermionic Emission ◽  
Polycrystalline Diamond

scholarly journals Selective deposition of polycrystalline diamond films using photolithography with addition of nanodiamonds as nucleation centers

2016 ◽  
Vol 116 ◽  
pp. 012001 ◽  
Author(s):  
V V Okhotnikov ◽  
S A Linnik ◽  
A V Gaidaichuk ◽  
D V Shashev ◽  
G Yu Nazarova ◽  
...  
Keyword(s):  
Diamond Films ◽  
Polycrystalline Diamond ◽  
Selective Deposition
Sign in / Sign up

Export Citation Format

Share Document