Low‐dislocation‐density silicon‐on‐insulator material produced by sequential oxygen implantation and low‐temperature annealing

1992 ◽  
Vol 60 (25) ◽  
pp. 3147-3149 ◽  
Author(s):  
D. Venables ◽  
K. S. Jones ◽  
F. Namavar
Keyword(s):  
Low Temperature ◽  
Dislocation Density ◽  
Silicon On Insulator ◽  
Oxygen Implantation ◽  
Low Temperature Annealing ◽  
Low Dislocation Density

Low‐temperature properties and phototransport in silicon‐on‐insulator films synthesized by oxygen implantation

1988 ◽  
Vol 63 (9) ◽  
pp. 4575-4579 ◽  
Author(s):  
George Papaioannou ◽  
Sorin Cristoloveanu ◽  
Peter Hemment
Keyword(s):  
Low Temperature ◽  
Silicon On Insulator ◽  
Oxygen Implantation

Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers

1999 ◽  
Vol 201-202 ◽  
pp. 530-533 ◽  
Author(s):  
C.S. Peng ◽  
H. Chen ◽  
Z.Y. Zhao ◽  
J.H. Li ◽  
D.Y. Dai ◽  
...  
Keyword(s):  
Low Temperature ◽  
Dislocation Density ◽  
Strain Relaxation ◽  
Low Dislocation Density

Formation of low dislocation density silicon‐on‐insulator by a single implantation and annealing

1990 ◽  
Vol 57 (2) ◽  
pp. 156-158 ◽  
Author(s):  
M. K. EL‐Ghor ◽  
S. J. Pennycook ◽  
F. Namavar ◽  
N. H. Karam
Keyword(s):  
Dislocation Density ◽  
Silicon On Insulator ◽  
Low Dislocation Density

Low-temperature annealing of YBa2Cu3O7-x

1992 ◽  
Vol 50 (1) ◽  
pp. 88-89
Author(s):  
R.L. Sabatini ◽  
Yimei Zhu ◽  
Masaki Suenaga ◽  
A.R. Moodenbaugh
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Oxygen Diffusion ◽  
Diffusion Rate ◽  
Oxygen Depletion ◽  
Low Temperature Annealing ◽  
Transmission Electron ◽  
Microstructural Effects ◽  
Oxygen Diffusion Rate

Low temperature annealing (<400°C) of YBa2Cu3O7x in a ozone containing oxygen atmosphere is sometimes carried out to oxygenate oxygen deficient thin films. Also, this technique can be used to fully oxygenate thinned TEM specimens when oxygen depletion in thin regions is suspected. However, the effects on the microstructure nor the extent of oxygenation of specimens has not been documented for specimens exposed to an ozone atmosphere. A particular concern is the fact that the ozone gas is so reactive and the oxygen diffusion rate at these temperatures is so slow that it may damage the specimen by an over-reaction. Thus we report here the results of an investigation on the microstructural effects of exposing a thinned YBa2Cu3O7-x specimen in an ozone atmosphere using transmission electron microscopy and energy loss spectroscopy techniques.

Low dislocation density AlN on sapphire prepared by double sputtering and annealing

2020 ◽  
Vol 13 (9) ◽  
pp. 095501
Author(s):  
Ding Wang ◽  
Kenjiro Uesugi ◽  
Shiyu Xiao ◽  
Kenji Norimatsu ◽  
Hideto Miyake
Keyword(s):  
Dislocation Density ◽  
Low Dislocation Density
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