Arsenic dimers and multilayers on (001)GaAs surfaces in atmospheric pressure organometallic chemical vapor deposition

1992 ◽  
Vol 60 (10) ◽  
pp. 1238-1240 ◽  
Author(s):  
Itaru Kamiya ◽  
H. Tanaka ◽  
D. E. Aspnes ◽  
L. T. Florez ◽  
E. Colas ◽  
...  
1987 ◽  
Vol 102 ◽  
Author(s):  
S. Bethke ◽  
H-C Pan ◽  
B. W. Wessels

ABSTRACTZnO layers have been heteroepitaxially deposited on sapphire using organometallic chemical vapor deposition at atmospheric pressure. The quality of the layers was assessed using photoluminescence spectroscopy at 16K. The layers exhibited strong ultraviolet near bandedge luminescence. The dependence of near bandedge and deep level photoluminescence emission on deposition conditions was examined.


2003 ◽  
Vol 15 (9) ◽  
pp. 1763-1765 ◽  
Author(s):  
Naoyuki Takahashi ◽  
Yusuke Nakatani ◽  
Takuma Yatomi ◽  
Takato Nakamura

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