Epoxy‐amine polymer waveguide containing nonlinear optical molecules fabricated by chemical vapor deposition

1992 ◽  
Vol 60 (10) ◽  
pp. 1158-1160 ◽  
Author(s):  
Satoshi Tatsuura ◽  
Wataru Sotoyama ◽  
Tetsuzo Yoshimura
2002 ◽  
Vol 91 (7) ◽  
pp. 4607-4610 ◽  
Author(s):  
G. Vijaya Prakash ◽  
M. Cazzanelli ◽  
Z. Gaburro ◽  
L. Pavesi ◽  
F. Iacona ◽  
...  

2006 ◽  
Vol 958 ◽  
Author(s):  
Rita Spano ◽  
Massimo Cazzanelli ◽  
Nicola Daldosso ◽  
Zeno Gaburro ◽  
Luigi Ferraioli ◽  
...  

ABSTRACTA systematic study of nonlinear optical properties of silicon nanocrystals (Si-nc) grown by plasma enhanced chemical vapor deposition (PECVD) is reported. Nonlinear optical refraction and absorption have been measured by z-scan technique at three different time regimes and at different wavelengths to investigate both the thermal and electronic responses. For this purpose three different laser sources have been used. Different behaviors, as expected from the theory, for different pump pulse durations are observed.


1995 ◽  
Vol 392 ◽  
Author(s):  
M. J. Nystrom ◽  
B. W. Wessels ◽  
J. Chen ◽  
D. Studebaker ◽  
T. J. Marks ◽  
...  

AbstractFerroelectric potassium niobate thin films have been deposited by conventional, low pressure metalorganic chemical vapor deposition on several types of oxide substrates. The films were epitaxial with a c-axis orientation normal to the substrate. Atomic force microscopy revealed a surface roughness of 1 - 4 nm. Transmission electron microscopy showed the film/substrate interface to be semi-coherent with lattice misfit accommodated by misfit dislocations. The nonlinear optical properties of the KNbO3 films were measured by a transmission technique. The room temperature, effective second order nonlinear coefficient was 13 pm/V.


Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.


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