Layer-Dependent Nonlinear Optical Properties of WS2, MoS2, and Bi2S3 Films Synthesized by Chemical Vapor Deposition

2021 ◽  
Author(s):  
Chunhui Lu ◽  
Mingwei Luo ◽  
Yanqing Ge ◽  
Yuanyuan Huang ◽  
Qiyi Zhao ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Nonlinear Optical ◽  
Chemical Vapor ◽  
Nonlinear Optical Properties

Nonlinear optical properties of silicon nanocrystals grown by plasma-enhanced chemical vapor deposition

2002 ◽  
Vol 91 (7) ◽  
pp. 4607-4610 ◽  
Author(s):  
G. Vijaya Prakash ◽  
M. Cazzanelli ◽  
Z. Gaburro ◽  
L. Pavesi ◽  
F. Iacona ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Nanocrystals ◽  
Nonlinear Optical ◽  
Chemical Vapor ◽  
Nonlinear Optical Properties

Nonlinear Optical Properties of Si Nanocrystals

2006 ◽  
Vol 958 ◽  
Author(s):  
Rita Spano ◽  
Massimo Cazzanelli ◽  
Nicola Daldosso ◽  
Zeno Gaburro ◽  
Luigi Ferraioli ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Nanocrystals ◽  
Nonlinear Optical ◽  
Chemical Vapor ◽  
Nonlinear Optical Properties ◽  
Si Nanocrystals ◽  
Optical Refraction ◽  
Laser Sources

ABSTRACTA systematic study of nonlinear optical properties of silicon nanocrystals (Si-nc) grown by plasma enhanced chemical vapor deposition (PECVD) is reported. Nonlinear optical refraction and absorption have been measured by z-scan technique at three different time regimes and at different wavelengths to investigate both the thermal and electronic responses. For this purpose three different laser sources have been used. Different behaviors, as expected from the theory, for different pump pulse durations are observed.

Deposition of Potassium Niobate Thin Films by Metalorganic Chemical Vapor Deposition and their Nonlinear Optical Properties

1995 ◽  
Vol 392 ◽  
Author(s):  
M. J. Nystrom ◽  
B. W. Wessels ◽  
J. Chen ◽  
D. Studebaker ◽  
T. J. Marks ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Nonlinear Optical ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Nonlinear Optical Properties ◽  
Potassium Niobate ◽  
Metalorganic Chemical

AbstractFerroelectric potassium niobate thin films have been deposited by conventional, low pressure metalorganic chemical vapor deposition on several types of oxide substrates. The films were epitaxial with a c-axis orientation normal to the substrate. Atomic force microscopy revealed a surface roughness of 1 - 4 nm. Transmission electron microscopy showed the film/substrate interface to be semi-coherent with lattice misfit accommodated by misfit dislocations. The nonlinear optical properties of the KNbO3 films were measured by a transmission technique. The room temperature, effective second order nonlinear coefficient was 13 pm/V.

Optical Properties of Novel GaN 3D Structures Grown by Metal-Organic Chemical Vapor Deposition (MOCVD)

2004 ◽  
Vol 43 (No. 6A) ◽  
pp. L698-L701 ◽  
Author(s):  
Marco Sacilotti ◽  
Luc Imhoff ◽  
Colette Dumas ◽  
Pierre Viste ◽  
Jean-Claude Vial ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
3D Structures ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

scholarly journals Control of the Polarity and Surface Morphology of GaN Films Deposited on C-Plane Sapphire

1999 ◽  
Vol 4 (S1) ◽  
pp. 634-641 ◽  
Author(s):  
M. Sumiya ◽  
T. Ohnishi ◽  
M. Tanaka ◽  
A. Ohtomo ◽  
M. Kawasaki ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Ion Scattering ◽  
Ion Scattering Spectroscopy ◽  
Metalorganic Chemical

Control of the polarity of GaN films deposited by metalorganic chemical vapor deposition was achieved by substrate nitridation and subsequent annealing of a buffer layer. The surface morphology and optical properties of 1.2μm GaN films were influenced by the different growth mode due to the polar direction. Coaxial impact collision ion scattering spectroscopy revealed that the polarity composition of a buffer layer on nitrided sapphire varied by annealing in a H2 atmosphere. It was considered that the systematic variation of the surface morphology was caused by the polarity composition of the buffer layer.

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