Nanometer‐scale morphology of homoepitaxial diamond films by atomic force microscopy

1992 ◽  
Vol 60 (14) ◽  
pp. 1685-1687 ◽  
Author(s):  
L. F. Sutcu ◽  
M. S. Thompson ◽  
C. J. Chu ◽  
R. H. Hauge ◽  
J. L. Margrave ◽  
...  
1992 ◽  
Vol 71 (12) ◽  
pp. 5930-5940 ◽  
Author(s):  
L. F. Sutcu ◽  
C. J. Chu ◽  
M. S. Thompson ◽  
R. H. Hauge ◽  
J. L. Margrave ◽  
...  

Nanomedicine ◽  
2014 ◽  
Vol 9 (4) ◽  
pp. 393-406 ◽  
Author(s):  
Ruthger W van Zwieten ◽  
Stefania Puttini ◽  
Małgorzata Lekka ◽  
Guillaume Witz ◽  
Evelyne Gicquel-Zouida ◽  
...  

2001 ◽  
Vol 78 (26) ◽  
pp. 4181-4183 ◽  
Author(s):  
M. Porti ◽  
M. Nafrı́a ◽  
X. Aymerich ◽  
A. Olbrich ◽  
B. Ebersberger

2001 ◽  
Vol 2001.7 (0) ◽  
pp. 171-172
Author(s):  
F. IWATA ◽  
K. KOBAYASHI ◽  
A. SASAKI ◽  
Y. KAWATA ◽  
C. EGAMI ◽  
...  

1994 ◽  
Vol 76 (7) ◽  
pp. 4099-4106 ◽  
Author(s):  
M. A. George ◽  
A. Burger ◽  
W. E. Collins ◽  
J. L. Davidson ◽  
A. V. Barnes ◽  
...  

2000 ◽  
Vol 618 ◽  
Author(s):  
A.S. Bakin ◽  
D. Piester ◽  
H.-H. Wehmann ◽  
A.A. Ivanov ◽  
A. Schlachetzki ◽  
...  

ABSTRACTThree-dimensional islands of InP have been reproducibly grown in the Stranski-Krastanow growth mode on Si (001) and (111) by using metal-organic vapor phase epitaxy in order to obtain nanometer-scale quantum dots. Atomic-force microscopy was used to determine the morphology of the samples and to evaluate the dimensions of the islands. Formation of three-dimensional islands with densities as high as 2.5×1010 cm−2 and small sizes have been observed. The evolution of island morphology is explained in terms of strain-relaxing mechanisms at the first stages of InP/Si heteroepitaxy.


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