Electron effective mass and band‐gap dependence on alloy composition of AlyGaxIn1−y−xAs, lattice matched to InP

1992 ◽  
Vol 60 (19) ◽  
pp. 2386-2388 ◽  
Author(s):  
R. F. Kopf ◽  
H. P. Wei ◽  
A. P. Perley ◽  
G. Livescu
Keyword(s):  
Band Gap ◽  
Effective Mass ◽  
Alloy Composition ◽  
Electron Effective Mass ◽  
Lattice Matched

Photoconductivité dans l'alliage GaAsxSb1−x en présence d'un champ magnétique

1974 ◽  
Vol 52 (8) ◽  
pp. 743-747 ◽  
Author(s):  
A. Filion ◽  
E. Fortin
Keyword(s):  
Magnetic Fields ◽  
Band Gap ◽  
Effective Mass ◽  
Alloy Composition ◽  
Longitudinal Optical ◽  
Optical Phonons ◽  
Champ Magnétique

The intrinsic photoconductivity of several samples of the alloy GaAsxSb1−x has been studied at 4.2 K in the presence of magnetic fields of up to 65 kG. Values for the band-gap, the reduced effective mass of the carriers, the energy of the longitudinal optical phonons across the alloy composition are deduced from the measurements.

scholarly journals Band gap and work function tailoring of SnO2 for improved transparent conducting ability in photovoltaics

2016 ◽  
Vol 4 (7) ◽  
pp. 1467-1475 ◽  
Author(s):  
Alex M. Ganose ◽  
David O. Scanlon
Keyword(s):  
Work Function ◽  
Band Gap ◽  
Effective Mass ◽  
Electron Affinity ◽  
Transparent Conducting Oxide ◽  
Optical Transparency ◽  
Electron Effective Mass ◽  
Transparent Conducting ◽  
Photovoltaic Applications

Alloying of PbO2 with SnO2 results in a material with a tuneable band gap, larger electron affinity and smaller electron effective mass, whilst maintaining high levels of optical transparency. These properties are expected to give rise to a more efficient transparent conducting oxide for use in photovoltaic applications.

Band-gap energy and electron effective mass of polycrystalline Zn3N2

2006 ◽  
Vol 99 (7) ◽  
pp. 076101 ◽  
Author(s):  
Toshikazu Suda ◽  
Kazuhiko Kakishita
Keyword(s):  
Band Gap ◽  
Effective Mass ◽  
Band Gap Energy ◽  
Electron Effective Mass ◽  
Gap Energy

Electron effective mass and nonparabolicity in InGaAs/InAlAs quantum wells lattice-matched to InP

2001 ◽  
Vol 11 (2-3) ◽  
pp. 219-223 ◽  
Author(s):  
N. Kotera ◽  
H. Arimoto ◽  
N. Miura ◽  
K. Shibata ◽  
Y. Ueki ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Effective Mass ◽  
Electron Effective Mass ◽  
Lattice Matched

Prediction of New Fingerprints of Ordering in GaInP2 Alloys

1995 ◽  
Vol 417 ◽  
Author(s):  
Alberto Franceschetti ◽  
Su-Huai Wei ◽  
Alex Zunger
Keyword(s):  
Band Gap ◽  
Effective Mass ◽  
Pressure Coefficient ◽  
Strong Anisotropy ◽  
Electron Effective Mass ◽  
Effective Masses ◽  
Epitaxial Strain ◽  
Degree Of Order ◽  
Good Agreement ◽  
Disordered Alloy

AbstractUsing ab initio all-electron methods, we investigate the evolution of effective masses, deformation potentials and pressure coefficients with the degree of long-range order in spontaneously ordered Ga0.5In0.5P alloys. We find that (i) the electron effective mass in the ordering direction increases significantly with the degree of order, while the effective mass in the perpendicular direction decreases; this produces a strong anisotropy of the electron effective mass which is not present in the disordered alloy; (ii) the band-gap deformation potential for (001) epitaxial strain decreases with increasing degree of order, reflecting the extent of the ordering-induced Γ - L coupling; (iii) the band-gap pressure coefficient decreases from 8.4 meV/kbar in the disordered alloy to 6.6 meV/kbar in the ordered CuPt structure; interpolation to partial degrees of order leads to good agreement with recent high-pressure experiments.

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