Compositional dependence of band‐gap energy and conduction‐band effective mass of In1−x−yGaxAlyAs lattice matched to InP

1982 ◽  
Vol 41 (5) ◽  
pp. 476-478 ◽  
Author(s):  
D. Olego ◽  
T. Y. Chang ◽  
E. Silberg ◽  
E. A. Caridi ◽  
A. Pinczuk
Keyword(s):  
Band Gap ◽  
Effective Mass ◽  
Conduction Band ◽  
Band Gap Energy ◽  
Compositional Dependence ◽  
Gap Energy ◽  
Lattice Matched

Study of Band Alignment at CBD-CdS/Cu(In1-xGax)Se2 (x = 0.2 - 1.0) Interfaces by Photoemission and Inverse Photoemission Spectroscopy

2007 ◽  
Vol 1012 ◽  
Author(s):  
Shimpei Teshima ◽  
Hirotake Kashiwabara ◽  
Keimei Masamoto ◽  
Kazuya Kikunaga ◽  
Kazunori Takeshita ◽  
...  
Keyword(s):  
Band Gap ◽  
Conduction Band ◽  
Valence Band Maximum ◽  
Band Gap Energy ◽  
Band Alignment ◽  
Photoemission Spectroscopy ◽  
Gap Energy ◽  
Conduction Band Offset ◽  
Inverse Photoemission ◽  
Inverse Photoemission Spectroscopy

AbstractDependence of band alignments at interfaces between CdS by chemical bath deposition and Cu(In1-xGax)Se2 by conventional 3-stage co-evaporation on Ga substitution ratio x from 0.2 to 1.0 has been systematically studied by means of photoemission spectroscopy (PES) and inverse photoemission spectroscopy (IPES). For the specimens of the In-rich CIGS, conduction band minimum (CBM) by CIGS was lower than that of CdS. Conduction band offset of them was positive about +0.3 ~ +0.4 eV. Almost flat conduction band alignment was realized at x = 0.4 ~ 0.5. On the other hand, at the interfaces over the Ga-rich CIGS, CBM of CIGS was higher than that of CdS, and CBO became negative. The present study reveals that the decrease of CBO with a rise of x presents over the wide rage of x, which results in the sign change of CBO around 0.4 ~ 0.45. In the Ga-rich interfaces, the minimum of band gap energy, which corresponded to energy spacing between CBM of CdS and valence band maximum of CIGS, was almost identical against the change of band gap energy of CIGS. Additionally, local accumulation of oxygen related impurities was observed at the Ga-rich samples, which might cause the local rise of band edges in central region of the interface.

Band-Gap Energy and Effective Mass of BGaN

2000 ◽  
Vol 39 (Part 1, No. 4B) ◽  
pp. 2389-2393 ◽  
Author(s):  
Tohru Honda ◽  
Masao Shibata ◽  
Makoto Kurimoto ◽  
Mieko Tsubamoto ◽  
Jun Yamamoto ◽  
...  
Keyword(s):  
Band Gap ◽  
Effective Mass ◽  
Band Gap Energy ◽  
Gap Energy

Effects of Cu addition on band gap energy, density of state effective mass and charge transport properties in Bi2Te3 composites

RSC Advances ◽  
2014 ◽  
Vol 4 (82) ◽  
pp. 43811-43814 ◽  
Author(s):  
Hyeon Jin Yu ◽  
Mahn Jeong ◽  
Young Soo Lim ◽  
Won-Seon Seo ◽  
O-Jong Kwon ◽  
...  
Keyword(s):  
Energy Density ◽  
Charge Transport ◽  
Transport Properties ◽  
Band Gap ◽  
Effective Mass ◽  
Band Gap Energy ◽  
Density Of State ◽  
Gap Energy

The effects of Cu addition on band gap energy, effective mass, and charge transport properties in n-type CuxBi2Te3 composites are presented.

LITAO3 CHARACTERIZATION OF RUBIDIUM ON TEMPERATURE VARIATIONS

2018 ◽  
Vol 1 (02) ◽  
pp. 54-59
Author(s):  
Agus Ismangil ◽  
Teguh Puja Negara
Keyword(s):  
Band Gap ◽  
Valence Band ◽  
Conduction Band ◽  
Transmission Rate ◽  
Ferroelectric Material ◽  
Band Gap Energy ◽  
Ferroelectric Materials ◽  
Annealing Process ◽  
Optical Modulators ◽  
Gap Energy

One of the studies that recently attracted the attention of physicists is research on ferroelectric material because this material is very promising for the development of new generation devices in connection with the unique properties it has. Ferroelectric materials, especially those based on a mixture of lithium tantalite (LiTaO3), are expected to be applied to the infrared sensor. Lithium tantalate (LiTaO3) is a ferroelectric material that is unique in terms of pyroelectric and piezoelectric properties that are integrated with good mechanical and chemical stability. Therefore LiTaO3 is often used for several applications such as electro-optical modulators and pyroelectric detectors. LiTaO3 is a non-hygroscopic crystal, colorless, soluble in water, has a high transmission rate and does not easily damage its optical properties. LiTaO3 is a material that has a high dielectric constant and a high load storage capacity. This research has succeeded in determining the band gap energy of the LiTaO3 film in the rubidium chamber obtained in the range of values 2.02-2.98 eV as shown in figure 4. The LiTaO3 film after the annealing process at a temperature of 650 oC, has the highest band gap energy of 2.98 eV. Large energy is needed on the electrons to be excited from the valence band to the conduction band. Whereas in the LiTaO3 film after an annealing process of 800 oC, the band gap energy obtained is 2.02 eV. This makes it easier for electrons to be excited from the valence band to the conduction band because the energy needed is not too large.

Steplike Lineshape of Low Temperature Photoreflectance Spectra of InAlAs

1995 ◽  
Vol 406 ◽  
Author(s):  
Y. Baltagi ◽  
E. Bearzi ◽  
C. Bru-Chevallier ◽  
T. Benyattou ◽  
G. Guillot ◽  
...  
Keyword(s):  
Low Temperature ◽  
Band Gap ◽  
Photo Luminescence ◽  
Band Gap Energy ◽  
Carrier Localization ◽  
Gap Energy ◽  
Lattice Matched

AbstractWe have performed low temperature photoreflectance spectra on several MBE-InAlAs layers lattice matched to InP. Unusual lineshapes of PR spectra are observed at temperatures below 40K, characterized by a step at the InAlAs band gap energy. This step is shown to be related to a strong modification of the photo luminescence background of the photoreflectance spectra. This modification is attributed to an effect of carrier localization due to clustering effects in the InAlAs layers

Estimation of Effective Band Gap Energy of CdxZn1-xS/ZnS Multiple Quantum Wells Lattice-Matched to GaP Substrates

2004 ◽  
Vol 43 (6A) ◽  
pp. 3491-3492
Author(s):  
Chikara Onodera ◽  
Tadayoshi Shoji ◽  
Yukio Hiratate ◽  
Tsunemasa Taguchi
Keyword(s):  
Quantum Wells ◽  
Band Gap ◽  
Band Gap Energy ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Gap Energy ◽  
Lattice Matched

scholarly journals The Effect of Niobium and Rubidium Doping on the Energy Band Gap of a Lithium Tantalate (LiTaO3) Thin Film

2021 ◽  
Vol 32 (2) ◽  
pp. 1-5
Author(s):  
Agus Ismangil ◽  
Fatimah Arofiati Noor ◽  
Toto Winata
Keyword(s):  
Band Gap ◽  
Valence Band ◽  
Conduction Band ◽  
Chemical Solution Deposition ◽  
Band Gap Energy ◽  
Chemical Solution ◽  
Energy Band Gap ◽  
Solution Deposition ◽  
Gap Energy ◽  
Niobium Doped

Chemical solution deposition (CSD) is a technique for making a film by keeping synthetic arrangements on the outer layer of the substrate. The outcomes show that the band gap energy of the LiTaO3 film is 1 eV. Electrons are more effectively invigorated to the valence band than to the conduction band on the grounds that the energy required is not excessively huge. Niobium-doped LiTaO3 film has a band gap energy of 1.15 eV. A large amount of energy is needed for electrons to be energized from the valence band to the conduction band. The rubidium-doped LiTaO3 film has a band gap energy of 1.30 eV.

Temperature dependence of the direct band gap energy and donor–acceptor transition energies in Be‐doped GaAsSb lattice matched to InP

1994 ◽  
Vol 65 (19) ◽  
pp. 2442-2444 ◽  
Author(s):  
K. G. Merkel ◽  
V. M. Bright ◽  
M. A. Marciniak ◽  
C. L. A. Cerny ◽  
M. O. Manasreh
Keyword(s):  
Temperature Dependence ◽  
Band Gap ◽  
Band Gap Energy ◽  
Transition Energies ◽  
Direct Band Gap ◽  
Gap Energy ◽  
Donor Acceptor ◽  
Direct Band ◽  
Lattice Matched

Band-gap energy and electron effective mass of polycrystalline Zn3N2

2006 ◽  
Vol 99 (7) ◽  
pp. 076101 ◽  
Author(s):  
Toshikazu Suda ◽  
Kazuhiko Kakishita
Keyword(s):  
Band Gap ◽  
Effective Mass ◽  
Band Gap Energy ◽  
Electron Effective Mass ◽  
Gap Energy
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