Polarity dependence of hot‐electron‐induced trap creation in metal‐oxide‐semiconductor capacitors

D. A. Buchanan

doi:10.1063/1.106968

Polarity dependence of hot‐electron‐induced trap creation in metal‐oxide‐semiconductor capacitors

Applied Physics Letters ◽

10.1063/1.106968 ◽

1992 ◽

Vol 60 (2) ◽

pp. 216-218 ◽

Cited By ~ 12

Author(s):

D. A. Buchanan

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Electron

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Compact Hot-Electron Induced Oxide Trapping Charge and Post-Stress Drain Current Modeling for Buried-Channel p-Type Metal–Oxide–Semiconductor Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.6200 ◽

2008 ◽

Vol 47 (8) ◽

pp. 6200-6204 ◽

Cited By ~ 1

Author(s):

Chorng-Jye Sheu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Electron ◽

Buried Channel ◽

P Type ◽

Post Stress

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Hot-electron injection in stacked-gate metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1890445 ◽

2005 ◽

Vol 97 (10) ◽

pp. 104501

Author(s):

M. P. Temple ◽

D. W. Dyke ◽

P. A. Childs

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Electron Injection ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Electron ◽

Hot Electron Injection

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Hot electron transport through metal–oxide–semiconductor structures studied by ballistic electron emission spectroscopy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.587821 ◽

1995 ◽

Vol 13 (4) ◽

pp. 1830 ◽

Cited By ~ 30

Author(s):

R. Ludeke

Keyword(s):

Electron Transport ◽

Metal Oxide ◽

Electron Emission ◽

Emission Spectroscopy ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Electron ◽

Semiconductor Structures ◽

Ballistic Electron ◽

Hot Electron Transport

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Nanophotonic, Hot-Electron Avalanche Solar-Blind Ultraviolet Detectors with a Metal-Oxide-Semiconductor Structure

Advanced Photonics 2015 ◽

10.1364/iprsn.2015.im2b.7 ◽

2015 ◽

Cited By ~ 2

Author(s):

Zhiyuan Wang ◽

Xiaoxin Wang ◽

Jifeng Liu

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

Hot Electron ◽

Electron Avalanche ◽

Ultraviolet Detectors ◽

Solar Blind ◽

Metal Oxide Semiconductor Structure

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Suppression of hot-electron-induced interface degradation in metal-oxide-semiconductor devices by backsurface argon bombardment

Microelectronics Reliability ◽

10.1016/s0026-2714(98)00043-2 ◽

1998 ◽

Vol 38 (9) ◽

pp. 1407-1411 ◽

Cited By ~ 3

Author(s):

M.Q Huang ◽

P.T Lai ◽

J.P Xu ◽

S.H Zeng ◽

G.Q Li ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Electron

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Self-heating simulation of GaN-based metal-oxide-semiconductor high-electron-mobility transistors including hot electron and quantum effects

Journal of Applied Physics ◽

10.1063/1.2354327 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074501 ◽

Cited By ~ 47

Author(s):

W. D. Hu ◽

X. S. Chen ◽

Z. J. Quan ◽

C. S. Xia ◽

W. Lu ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

Hot Electron ◽

High Electron Mobility ◽

Self Heating ◽

Electron Mobility Transistors

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Injection energy dependence of spin-polarized hot-electron transport through a ferromagnetic metal/oxide/semiconductor junction

Physical Review B ◽

10.1103/physrevb.77.094409 ◽

2008 ◽

Vol 77 (9) ◽

Cited By ~ 8

Author(s):

N. Rougemaille ◽

D. Lamine ◽

G. Lampel ◽

Y. Lassailly ◽

J. Peretti

Keyword(s):

Electron Transport ◽

Metal Oxide ◽

Energy Dependence ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Electron ◽

Spin Polarized ◽

Injection Energy ◽

Semiconductor Junction ◽

Hot Electron Transport

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Hot-electron-induced luminescence of metal oxide-semiconductor tunnel devices

Semiconductor Science and Technology ◽

10.1088/0268-1242/18/2/315 ◽

2003 ◽

Vol 18 (2) ◽

pp. 147-153 ◽

Cited By ~ 3

Author(s):

N Asli ◽

M I Vexler ◽

A F Shulekin ◽

P Seegebrecht

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Electron

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On the mechanism of interface trap generation under nonuniform channel-hot-electron stress and uniform carrier-injection stress in metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.1389318 ◽

2001 ◽

Vol 79 (6) ◽

pp. 863-865 ◽

Cited By ~ 4

Author(s):

Kangguo Cheng ◽

Jean-Pierre Leburton ◽

Karl Hess ◽

Joseph W. Lyding

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Trap ◽

Hot Electron ◽

Carrier Injection

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Improvement of Hot-Electron Hardness in Metal-Oxide-Semiconductor Devices by Combination of Gate Electrode Deposited Using Amorphous Si and Gate Oxide Grown in N2O

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.l968 ◽

1996 ◽

Vol 35 (Part 2, No. 8A) ◽

pp. L968-L970 ◽

Cited By ~ 4

Author(s):

Kuei-Shu Chang-Liao ◽

Tang-Yuan Lan

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Electron ◽

Gate Electrode ◽

Amorphous Si

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