scholarly journals Improved crystalline quality of Si1−xGexformed by low‐temperature germanium ion implantation

1992 ◽  
Vol 60 (4) ◽  
pp. 451-453 ◽  
Author(s):  
Ken‐ichi Shoji ◽  
Akira Fukami ◽  
Takahiro Nagano ◽  
Takashi Tokuyama ◽  
Cary Y. Yang
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
Crystalline Quality

Dependence of Buried CoSi2 Resistivity on ION Implantation and Annealing Conditions1

1991 ◽  
Vol 235 ◽  
Author(s):  
Fereydoon Namavar ◽  
N. M. Kalkhoran ◽  
J. M. Manke ◽  
L. Luo ◽  
J. T. McGinn
Keyword(s):  
Electrical Resistivity ◽  
Ion Implantation ◽  
Material Properties ◽  
Crystalline Quality ◽  
Cobalt Disilicide ◽  
Implantation Temperature ◽  
Annealing Conditions

ABSTRACTWe have investigated the dependence of electrical and material properties of buried CoSi2 layers on Co+ implantation and annealing conditions. The results indicated that the electrical resistivity and crystalline quality of the implanted buried CoSi2 layers depend strongly on the implantation temperature. CoSi2 layers with the lowest resistivity and best crystalline quality (Xmin as low as 3.6%) were obtained from samples implanted at 300°C-400°C. Implantation at higher temperatures (e.g., 580°C) produced cobalt disilicide layers with significantly higher electrical resistivity and a Xmin of about 10.7%.

Improvement of crystalline quality of GaAsyP1−x−yNx layers with high nitrogen compositions at low-temperature growth by atomic hydrogen irradiation

2003 ◽  
Vol 251 (1-4) ◽  
pp. 443-448 ◽  
Author(s):  
Kenji Momose ◽  
Hiroo Yonezu ◽  
Yuzo Furukawa ◽  
Atsushi Utsumi ◽  
Yusuke Yoshizumi ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Hydrogen ◽  
Crystalline Quality ◽  
High Nitrogen ◽  
Temperature Growth ◽  
Low Temperature Growth

Improvement of the crystalline quality of the ZnO epitaxial layer on a low-temperature grown ZnO buffer layer

2004 ◽  
Vol 266 (4) ◽  
pp. 505-510 ◽  
Author(s):  
J.F. Yan ◽  
Y.M. Lu ◽  
Y.C. Liu ◽  
H.W. Liang ◽  
B.H. Li ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Epitaxial Layer ◽  
Crystalline Quality ◽  
Zno Buffer Layer

scholarly journals Improvement of Crystalline Quality of Group III Nitrides on Sapphire Using Low Temperature Interlayers

1999 ◽  
Vol 4 (S1) ◽  
pp. 870-877 ◽  
Author(s):  
H. Amano ◽  
M. Iwaya ◽  
N. Hayashi ◽  
T. Kashima ◽  
M. Katsuragawa ◽  
...  
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Vapor Phase ◽  
Group Iii Nitrides ◽  
Crystalline Quality ◽  
Structural Quality ◽  
Group Iii

In organometallic vapor phase epitaxial growth of group III nitrides on sapphire, insertion of a low temperature interlayer is found to improve crystalline quality of AlxGa1−xN layer with x from 0 to 1. Here the effects of the low temperature deposited GaN or AlN interlayers on the structural quality of group III nitrides is discussed.

EFFECTS OF Au ON THE GROWTH OF ZnO NANOSTRUCTURES ON Si BY MOCVD

2013 ◽  
Vol 06 (04) ◽  
pp. 1350044
Author(s):  
CHEN CONG ◽  
LU YANG FAN ◽  
HE HAI PING ◽  
WU KE WEI ◽  
YE ZHI ZHEN
Keyword(s):  
Low Temperature ◽  
Au Nanoparticles ◽  
Critical Role ◽  
Zno Nanorods ◽  
Crystalline Quality ◽  
Organic Chemical ◽  
Zno Nanostructures ◽  
Gaseous Species ◽  
Nano Zno

The effects of Au on the growth of ZnO nanostructures on Si by metal organic chemical vapor deposition (MOCVD) at a relatively low temperature (450°C) were investigated. The experimental results showed that Au nanoparticles played a critical role during the growth of the ZnO nanostructures and affected their morphology and optical properties. It was found that Au nanoparticles particularly affected the nucleation of ZnO nanostructures during the growth process and the Au -assisted growth mechanism of ZnO nanostructures should be ascribed to the vapor–solid (VS) mechanism. The formation of a nanoneedle may be attributed to a more reactive interface between Au and ZnO , which leads to more zinc gaseous species absorbed near the interface. Different nucleation sites on ZnO nuclei resulted in the disorder of ZnO nanoneedles. Moreover, the crystalline quality of nano- ZnO was improved due to the presence of Au , according to the smaller full width at half maximum (FWHM) of the low-temperature exciton emission. We confirmed that ZnO nanoneedles showed better crystalline quality than ZnO nanorods through the HRTEM images and the SAED patterns. The reason for the improvement of the crystalline quality of nano- ZnO may be due to the less lattice mismatch.

Improvement of crystalline quality of epitaxial Si layers by ion‐implantation techniques

1979 ◽  
Vol 34 (1) ◽  
pp. 76-78 ◽  
Author(s):  
S. S. Lau ◽  
S. Matteson ◽  
J. W. Mayer ◽  
P. Revesz ◽  
J. Gyulai ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Crystalline Quality ◽  
Implantation Techniques

Improvement of Crystalline Quality of Si Films on CaF2/Si Structures by Ion Implantation and Solid Phase Recrystallization

1983 ◽  
Vol 22 (Part 2, No. 2) ◽  
pp. L118-L120 ◽  
Author(s):  
Tanemasa Asano ◽  
Hiroshi Ishiwara ◽  
Kouzo Orihara ◽  
Seijiro Furukawa
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Crystalline Quality ◽  
Phase Recrystallization ◽  
Si Films

Crystalline quality of low-temperature-grown In Ga1−As coherently grown on InP(0 0 1) substrate

2020 ◽  
Vol 544 ◽  
pp. 125703 ◽  
Author(s):  
Yoriko Tominaga ◽  
Shingo Hirose ◽  
Kentaro Hirayama ◽  
Hitoshi Morioka ◽  
Noriaki Ikenaga ◽  
...  
Keyword(s):  
Low Temperature ◽  
Crystalline Quality
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