Textured diamond growth on (100) β‐SiC via microwave plasma chemical vapor deposition

1992 ◽  
Vol 60 (6) ◽  
pp. 698-700 ◽  
Author(s):  
B. R. Stoner ◽  
J. T. Glass
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

Parameter window of diamond growth on GaN films by microwave plasma chemical vapor deposition

2008 ◽  
Vol 17 (7-10) ◽  
pp. 1775-1779 ◽  
Author(s):  
Dipti Ranjan Mohapatra ◽  
Padmnabh Rai ◽  
Abha Misra ◽  
Pawan K. Tyagi ◽  
Brajesh S. Yadav ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

Role of nitrogen in the homoepitaxial growth on diamond anvils by microwave plasma chemical vapor deposition

2007 ◽  
Vol 22 (4) ◽  
pp. 1112-1117 ◽  
Author(s):  
Wei Qiu ◽  
Yogesh K. Vohra ◽  
Samuel T. Weir
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Homoepitaxial Growth ◽  
Diamond Anvils

The catalytic effect of nitrogen during the homoepitaxial diamond growth on a diamond anvil was investigated using isotopically enriched carbon-13 methane in a feed-gas mixture in a microwave plasma chemical vapor deposition reactor. The use of isotopically enriched carbon-13 allows us to precisely measure the film thickness in this homoepitaxial growth process by Raman spectroscopy. It is found that the addition of 0.4 sccm of nitrogen to an H2/CH4/O2 gas-phase mixture increases the growth rate by a factor of 2.3. This enhanced growth rate with the addition of trace amounts of nitrogen allows for a quick encapsulation of embedded sensors in the designer diamond anvils and is a key control parameter in the fabrication process. Photoluminescence spectroscopy reveals nitrogen-vacancy defect centers in the high-growth-rate diamonds. Atomic force microscopy reveals dramatic changes in the surface microstructure as is indicated by a total loss of step-flow growth morphology on the addition of nitrogen in the plasma.

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