Surface electronic states of low‐temperature H‐plasma cleaned Si(100)

1991 ◽  
Vol 59 (16) ◽  
pp. 1995-1997 ◽  
Author(s):  
Jaewon Cho ◽  
T. P. Schneider ◽  
J. VanderWeide ◽  
Hyeongtag Jeon ◽  
R. J. Nemanich
Keyword(s):  
Low Temperature ◽  
Electronic States

Low Temperature Electronic States of B′-Type Pd(dmit)2 Compounds

2000 ◽  
Vol 343 (1) ◽  
pp. 187-192 ◽  
Author(s):  
Toshikazu Nakamura ◽  
Hiroshi Tsukada ◽  
Toshihiro Takahashi ◽  
Shuji Aonuma ◽  
Reizo Kato
Keyword(s):  
Low Temperature ◽  
Electronic States

Low-temperature charge transport inPrBa2Cu4O8: Electronic states of the doped Cu-O chain

1996 ◽  
Vol 54 (17) ◽  
pp. 11993-11996 ◽  
Author(s):  
I. Terasaki ◽  
N. Seiji ◽  
S. Adachi ◽  
H. Yamauchi
Keyword(s):  
Low Temperature ◽  
Charge Transport ◽  
Electronic States

STM/STS STUDY ON LOCAL ELECTRONIC STATES OF UNDERDOPED Bi2Sr2CaCu2O8+δ

2005 ◽  
Vol 19 (01n03) ◽  
pp. 231-234 ◽  
Author(s):  
N. MOMONO ◽  
A. HASHIMOTO ◽  
Y. KOBATAKE ◽  
S. NAKAMURA ◽  
M. ODA ◽  
...  
Keyword(s):  
Low Temperature ◽  
Spatial Variation ◽  
Electronic States ◽  
Atomic Scale ◽  
Gap Size ◽  
Tunneling Spectrum ◽  
Underdoped Sample ◽  
D Wave

Spatial variation of low temperature tunneling spectrum on atomic scale was examined on the slightly underdoped Bi 2212 sample (Tc~74 K , p~0.12) by using a STM/STS technique. We observed a V-shaped gap with sharp coherence peaks, which is expected for d-wave superconductors, over the distance of ~18 nm and no other kind of gap. The spatial variation of gap size Δ0 is small, ranging from 41 to 53 meV . These results indicate that the superconductivity takes place rather homogeneously in the slightly underdoped sample.

Low-Temperature Electronic States in θ-(BEDT-TTF)2RbZn(SCN)4: Competition of Different Ground States

1999 ◽  
Vol 103 (1-3) ◽  
pp. 1898-1899 ◽  
Author(s):  
T. Nakamura ◽  
W. Minagawa ◽  
R. Kinami ◽  
Y. Konishi ◽  
T. Takahashi
Keyword(s):  
Low Temperature ◽  
Ground States ◽  
Electronic States
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