Role of trimethylgallium exposure time in carbon doping and high temperature atomic layer epitaxy of GaAs

1991 ◽  
Vol 59 (19) ◽  
pp. 2397-2399 ◽  
Author(s):  
K. G. Reid ◽  
H. M. Urdianyk ◽  
S. M. Bedair
Keyword(s):  
High Temperature ◽  
Exposure Time ◽  
Atomic Layer ◽  
Carbon Doping ◽  
Atomic Layer Epitaxy

Carbon doping of III-V compounds by atomic-layer epitaxy

1992 ◽  
Author(s):  
Kimberly G. Reid ◽  
A. F. Myers ◽  
J. Ramdani ◽  
N. A. El-Masry ◽  
Salah M. Bedair
Keyword(s):  
Atomic Layer ◽  
Carbon Doping ◽  
Atomic Layer Epitaxy

Atomic layer epitaxy of GaAs and role of As‐source materials on self‐limiting mechanism

1992 ◽  
Vol 60 (12) ◽  
pp. 1498-1500 ◽  
Author(s):  
Kazuyuki Fujii ◽  
Ikuo Suemune ◽  
Tomoaki Koui ◽  
Masamichi Yamanishi
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Source Materials

scholarly journals Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy

2019 ◽  
Vol 37 (6) ◽  
pp. 060909 ◽  
Author(s):  
David R. Boris ◽  
Virginia D. Wheeler ◽  
Jason R. Avila ◽  
Syed B. Qadri ◽  
Charles R. Eddy ◽  
...  
Keyword(s):  
Oxide Films ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Plasma Properties

The role of surface and gas phase reactions in atomic layer epitaxy

1989 ◽  
Vol 19 (1-2) ◽  
pp. 137-147 ◽  
Author(s):  
P.D. Dapkus ◽  
S.P. DenBaars ◽  
Q. Chen ◽  
W.G. Jeong ◽  
B.Y. Maa
Keyword(s):  
Gas Phase ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Gas Phase Reactions

Role of Hydrogen in Atomic Layer Epitaxy of GaAs Using GaCl3

1992 ◽  
Vol 31 (Part 2, No. 12B) ◽  
pp. L1730-L1732 ◽  
Author(s):  
Ryuji Kobayashi ◽  
Katsumi Ishikawa ◽  
Satoru Narahara ◽  
Fumio Hasegawa
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy

Recent Progress in Atomic Layer Epitaxy of III–V Compounds

1991 ◽  
Vol 222 ◽  
Author(s):  
S. M. Bedair
Keyword(s):  
Quantum Wells ◽  
Recent Progress ◽  
Atomic Layer ◽  
Reactor Design ◽  
Ternary Alloys ◽  
Carbon Doping ◽  
Atomic Layer Epitaxy ◽  
Ordered Alloys ◽  
Potential Applications

ABSTRACTThe potential applications of Atomic Layer Epitaxy of III–V compounds will be outlined. These include the growth of special structures and devices such as ordered alloys, ultra-thin quantum wells, non-alloyed contacts, planar doped FET's and HBT's. Also, the main challenges facing ALE will be outlined along with possible solutions. These include reactor design, control of carbon doping and the growth of ternary alloys. A general assessment of the ALE technology will be provided.

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