High quantum efficiency strained InGaAs/AlGaAs quantum‐well resonant‐cavity inversion channel bipolar field‐effect phototransistor

1991 ◽  
Vol 59 (26) ◽  
pp. 3464-3466 ◽  
Author(s):  
S. Daryanani ◽  
G. W. Taylor ◽  
P. Cooke ◽  
P. Evaldsson ◽  
T. Vang
2011 ◽  
Vol 98 (20) ◽  
pp. 201107 ◽  
Author(s):  
R. M. Farrell ◽  
C. J. Neufeld ◽  
S. C. Cruz ◽  
J. R. Lang ◽  
M. Iza ◽  
...  

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