Comparison of the effects of surface passivation and base quasi‐electric fields on the current gain of AlGaAs/GaAs heterojunction bipolar transistors grown on GaAs and Si substrates

1991 ◽  
Vol 59 (6) ◽  
pp. 691-693 ◽  
Author(s):  
William Liu ◽  
Damian Costa ◽  
James Harris
Keyword(s):  
Electric Fields ◽  
Heterojunction Bipolar Transistors ◽  
Surface Passivation ◽  
Bipolar Transistors ◽  
Current Gain ◽  
Si Substrates

High Speed GaAs Based Devices on Si Substrates

1986 ◽  
Vol 67 ◽  
Author(s):  
Hadis Morkoc
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
Bipolar Transistors ◽  
Annealing Process ◽  
Current Gain ◽  
Device Performance ◽  
Microwave Frequencies ◽  
Si Substrates ◽  
Cutoff Frequencies ◽  
Oscillation Frequencies

ABSTRACTRemarkably good device performance at both dc and microwave frequencies has recently been obtained from GaAs based devices grown on Si substrates. In GaAs MESFETs on Si, current gain cutoff frequencies and maximum oscillation frequencies of fT = 13.3 GHz and fmax = 30 GHz have been obtained for 1.2μm devices, which is nearly identical to the performance achieved in GaAs on GaAs technology for both direct implant and epitaxial technology. For heterojunction bipolar transistors, current gain cutoff frequencies and maximum oscillation frequencies of fT = 30 GHz and fmax = 11.3 GHz have been obtained for emitter dimensions of 4×20μm2. In GaAs AlGaAs MODFETs. current gain cut-off frequencies of about 15 GHz with lμm gates were obtained on GaAs and Si substrates. The pseudomorphic InGaAs/GaAs MODFETs were also fabricated and found to be comparable to GaAs MODFETs although they should perform better. The structures were also shown to maintain their properties when put through ion implantation and annealing process. Given the performance already demonstrated in GaAs on Si devices and the advantages afforded by this technology, the growth of III-Vs on Si promises to play an important role in the future of heterojunction electronics.

Current gain increase in AlGaAs/GaAs heterojunction bipolar transistors using AlGaAs layer overgrowth

1994 ◽  
Vol 65 (11) ◽  
pp. 1403-1405 ◽  
Author(s):  
S. R. D. Kalingamudali ◽  
A. C. Wismayer ◽  
R. C. Woods ◽  
J. S. Roberts
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Current Gain ◽  
Algaas Layer

Prevention of InP/InGaAs/InP Double Heterojunction Bipolar Transistors from Current Gain Reduction during Passivation

2004 ◽  
Vol 833 ◽  
Author(s):  
Byoung-Gue Min ◽  
Jong-Min Lee ◽  
Seong-Il Kim ◽  
Chul-Won Ju ◽  
Kyung-Ho Lee
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Silicon Oxide ◽  
Surface Recombination ◽  
Surface States ◽  
Bipolar Transistors ◽  
Base Layer ◽  
Current Gain ◽  
Device Structure ◽  
Double Heterojunction ◽  
Gain Reduction

ABSTRACTA significant degradation of current gain of InP/InGaAs/InP double heterojunction bipolar transistors was observed after passivation. The amount of degradation depended on the degree of surface exposure of the p-type InGaAs base layer according to the epi-structure and device structure. The deposition conditions such as deposition temperature, kinds of materials (silicon oxide, silicon nitride and aluminum oxide) and film thickness were not major variables to affect the device performance. The gain reduction was prevented by the BOE treatment before the passivation. A possible explanation of this behavior is that unstable non-stoichiometric surface states produced by excess In, Ga, or As after mesa etching are eliminated by BOE treatment and reduce the surface recombination sites.

GaAs/AlGaAs heterojunction bipolar transistors on Si substrates

1985 ◽  
Author(s):  
R. Fischer ◽  
J. Klem ◽  
J.S. Gedymin ◽  
T. Henderson ◽  
W. Kopp ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Si Substrates

Improvement of current gain of C-doped GaAsSb-base heterojunction bipolar transistors by using an InAlP emitter

2005 ◽  
Vol 87 (2) ◽  
pp. 023503 ◽  
Author(s):  
Yasuhiro Oda ◽  
Haruki Yokoyama ◽  
Kenji Kurishima ◽  
Takashi Kobayashi ◽  
Noriyuki Watanabe ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Current Gain
Sign in / Sign up

Export Citation Format

Share Document