Lower temperature post‐annealing of thin films of YBa2Cu3O7at lower oxygen partial pressure

1991 ◽  
Vol 58 (4) ◽  
pp. 417-418 ◽  
Author(s):  
A. Mogro‐Campero ◽  
L. G. Turner
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Post Annealing ◽  
Lower Oxygen Partial Pressure ◽  
Lower Oxygen ◽  
Lower Temperature

Improvement in D-E Hysteresis Curve Squareness of PZT Thin Films - Effect of Oxygen Partial Pressure in High-Pressure Post-Annealing

2003 ◽  
Vol 52 (1) ◽  
pp. 137-145
Author(s):  
Junichi Karasawa ◽  
Taku Aoyama ◽  
Takeshi Kijima ◽  
Eiji Natori ◽  
Tatsuya Shimoda
Keyword(s):  
Thin Films ◽  
High Pressure ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Hysteresis Curve ◽  
Pzt Thin Films ◽  
Post Annealing ◽  
Effect Of Oxygen

COMPARISON OF MAGNETIC PROPERTY OF Cu-, Al-, AND Li-DOPED ZnO DILUTE MAGNETIC SEMICONDUCTOR THIN FILMS

2008 ◽  
Vol 15 (01n02) ◽  
pp. 81-85 ◽  
Author(s):  
L. H. VAN ◽  
J. DING ◽  
M. H. HONG ◽  
Z. C. FAN ◽  
L. WANG
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Magnetic Property ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Dilute Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Semiconductor Thin Films ◽  
Doped Zno ◽  
Lower Temperature

The properties of Cu -, Al -, and Li -doped ZnO dilute magnetic semiconductor (DMS) have been analyzed and compared. Zincite with wurtzite structures have been synthesized successfully on SiO 2 (101) and SiO 2 (110) substrates in both the Cu – ZnO and Li – ZnO DMS. The highly textured ZnO (002) peaks were able to form in the Cu – ZnO system at 400°C. However, it formed at even much lower temperature in the Li – ZnO system, that is only 25°C. ZnO (002) peaks in both systems were formed without any impurity phases. However, no crystalline structure is synthesized in the Al – ZnO system. The thin films formed are amorphous. The structural and related magnetic properties of the films were analyzed by XRD, AFM, and VSM. The films were found to be at their highest magnetism at the value of 3.1 emu/cm3 for Co – ZnO and 2.5 emu/cm3 for Li – ZnO , synthesized at 400°C, and under 1 × 10-4 Torr oxygen partial pressure.

Growth Mechanisms of YBa2Cu3O7-δ Thin Films Post Annealed at a Low Oxygen Partial Pressure

1993 ◽  
Vol 312 ◽  
Author(s):  
S. Y. Hou ◽  
D. J. Werder ◽  
Julia M. Phillips ◽  
J. H. Marshall
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Early Stage ◽  
Growth Mechanisms ◽  
Low Oxygen ◽  
Cross Sectional ◽  
Annealing Conditions ◽  
Post Annealing ◽  
Transmission Electron

AbstractThe growth mechanism of YBa2Cu3O 7-= thin films grown by the BaF2 post annealing process at low oxygen partial pressure have been studied by transmission electron microscopy. Under the annealing conditions of po2 = 4 Torr and 700°C, BaCuO2 and Y2 Cu2O5 precipitates develop from stoichiometric film precursors of YBCO during annealing. A growth model is proposed based on the observations. In addition, early stage nucleation and growth of both c- and a-axis oriented grains at the substrate interface were observed in quench annealed cross-sectional samples. 90° [100] symmetrical boundaries form between the a- and c-axis oriented grains. The possible effects of these boundaries are discussed.

Control of Polymorphism and Mass-Transfer in Al2O3 Scale on Alumina Forming Alloys

2010 ◽  
Vol 638-642 ◽  
pp. 888-893 ◽  
Author(s):  
Satoshi Kitaoka ◽  
Tsuneaki Matsudaira ◽  
Masashi Wada ◽  
Tomohiro Kuroyama
Keyword(s):  
Mass Transfer ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Oxygen Potential ◽  
Oxygen Permeability ◽  
Al2o3 Scale ◽  
Lower Oxygen Partial Pressure ◽  
Lower Oxygen ◽  
Potential Gradients ◽  
Conicraly Alloy

The transformation from metastable polymorphs to stable alpha-Al2O3 in the scale formed on a CoNiCrAlY alloy is accelerated under lower oxygen partial pressure (PO2), where both Al and Cr in the alloy are simultaneously oxidized, resulting in the formation of a dense and monolithic alpha-Al2O3 scale. Under higher PO2, where all components of the alloy are oxidized, the transformation is retarded and (Co,Ni)(Al,Cr)2O4 is also produced. The oxygen permeability in polycrystalline alpha-Al2O3 wafers exposed to steep oxygen potential gradients is evaluated at high temperatures to investigate the complicated mass-transfer phenomena through the scale formed on the alloy. The diffusion of Al and O species, which are responsible for the oxygen permeation along the grain boundaries of Al2O3, is dependent on the formation of an oxygen potential gradients. For Lu-doped Al2O3 polycrystals, it was found that Lu depressed the mobility of oxygen, but did not directly influence the migration of Al.

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