Molecular beam epitaxy grown PbSnTe buried quantum-well diode lasers with PbEuSeTe confinement layers

1991 ◽  
Vol 38 (12) ◽  
pp. 2693
Author(s):  
Z. Feit ◽  
D. Kostyk ◽  
R.J. Woods ◽  
P. Mak
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Diode Lasers

Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers

2011 ◽  
Vol 32 (10) ◽  
pp. 103002 ◽  
Author(s):  
Yu Zhang ◽  
Guowei Wang ◽  
Bao Tang ◽  
Yingqiang Xu ◽  
Yun Xu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Diode Lasers ◽  
Molecular Beam Epitaxy Growth ◽  
Strained Quantum Well

High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source ◽  
Semiconductor Quantum Well

Optical Properties of Zn1-xCdxSe/ZnSe Quantum Well Lasers Fabricated by Molecular Beam Epitaxy

1996 ◽  
Vol 203 ◽  
pp. 261-266
Author(s):  
L. Calcagnile ◽  
G. Colì ◽  
R. Cingolani ◽  
L. Vanzetti ◽  
L. Sorba ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers
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