Initial stage of epitaxial growth at the high temperature of GaAs and AlGaAs on Si by metalorganic chemical vapor deposition
1993 ◽
Vol 132
(1-2)
◽
pp. 134-140
◽
1994 ◽
Vol 145
(1-4)
◽
pp. 82-86
◽
1991 ◽
Vol 9
(3)
◽
pp. 401-404
◽
Modulated precursor flow epitaxial growth of ternary AlGaN by metalorganic chemical vapor deposition
2008 ◽
Vol 310
(23)
◽
pp. 4880-4884
◽
1993 ◽
Vol 140-142
◽
pp. 457-464
2011 ◽
Vol 50
(10R)
◽
pp. 105502
◽