Observation of reduced current thresholds in GaAs/AlGaAs vertical‐cavity surface‐emitting lasers grown on 4° off‐orientation (001) GaAs substrates

Y. H. Wang; K. Tai; Y. F. Hsieh; S. N. G. Chu; J. D. Wynn; A. Y. Cho

doi:10.1063/1.104086

Observation of reduced current thresholds in GaAs/AlGaAs vertical‐cavity surface‐emitting lasers grown on 4° off‐orientation (001) GaAs substrates

Applied Physics Letters ◽

10.1063/1.104086 ◽

1990 ◽

Vol 57 (16) ◽

pp. 1613-1615 ◽

Cited By ~ 7

Author(s):

Y. H. Wang ◽

K. Tai ◽

Y. F. Hsieh ◽

S. N. G. Chu ◽

J. D. Wynn ◽

...

Keyword(s):

Cavity Surface ◽

Gaas Substrates ◽

Surface Emitting Lasers ◽

Vertical Cavity Surface ◽

Emitting Lasers ◽

Vertical Cavity

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Optically-pumped vertical-cavity surface-emitting lasers on [110] GaAs substrates with stable polarization characteristics

Proceedings of IEEE 14th International Semiconductor Laser Conference ISLC-94 ◽

10.1109/islc.1994.519173 ◽

2002 ◽

Author(s):

D. Sun ◽

E. Towe ◽

J. Grantham ◽

G. Vansuch ◽

P. Ostdiek

Keyword(s):

Cavity Surface ◽

Optically Pumped ◽

Gaas Substrates ◽

Surface Emitting Lasers ◽

Vertical Cavity Surface ◽

Polarization Characteristics ◽

Emitting Lasers ◽

Vertical Cavity

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Blue vertical-cavity surface-emitting lasers based on second-harmonic generation grown on (311)B and (411)A GaAs substrates

Journal of Applied Physics ◽

10.1063/1.372065 ◽

2000 ◽

Vol 87 (4) ◽

pp. 1597-1603 ◽

Cited By ~ 23

Author(s):

Yasuhisa Kaneko ◽

Shigeru Nakagawa ◽

Yoshikatsu Ichimura ◽

Norihide Yamada ◽

Dan E. Mars ◽

...

Keyword(s):

Second Harmonic Generation ◽

Harmonic Generation ◽

Second Harmonic ◽

Cavity Surface ◽

Gaas Substrates ◽

Surface Emitting Lasers ◽

Vertical Cavity Surface ◽

Emitting Lasers ◽

Vertical Cavity

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Vertical cavity surface emitting lasers with InAs-InGaAs quantum dot active regions on GaAs substrates emitting at 1.3 μm

Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) ◽

10.1109/islc.2000.882265 ◽

2002 ◽

Author(s):

J.A. Lott ◽

N.N. Ledentsov ◽

V.M. Ustinov ◽

N.A. Maleev ◽

A.E. Zhukov ◽

...

Keyword(s):

Quantum Dot ◽

Active Regions ◽

Cavity Surface ◽

Gaas Substrates ◽

Surface Emitting Lasers ◽

Vertical Cavity Surface ◽

Emitting Lasers ◽

Vertical Cavity

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Reduced current thresholds in GaAs/AlGaAs vertical cavity surface emitting lasers using 4° off-oriented (001) GaAs substrates

Journal of Crystal Growth ◽

10.1016/0022-0248(91)91132-t ◽

1991 ◽

Vol 111 (1-4) ◽

pp. 1057-1061 ◽

Cited By ~ 2

Author(s):

Y.H. Wang ◽

K. Tai ◽

Y.F. Hsieh ◽

S.N.G. Chu ◽

J.D. Wynn ◽

...

Keyword(s):

Cavity Surface ◽

Gaas Substrates ◽

Surface Emitting Lasers ◽

Vertical Cavity Surface ◽

Emitting Lasers ◽

Vertical Cavity

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1.3 μm InGaAsN quantum well vertical cavity surface emitting lasers on GaAs substrates

LEOS 2000. 2000 IEEE Annual Meeting Conference Proceedings. 13th Annual Meeting. IEEE Lasers and Electro-Optics Society 2000 Annual Meeting (Cat. No.00CH37080) ◽

10.1109/leos.2000.890707 ◽

2002 ◽

Cited By ~ 1

Author(s):

J.F. Klem ◽

K.D. Choquette ◽

A.J. Fischer ◽

O. Blum ◽

K.M. Geib ◽

...

Keyword(s):

Quantum Well ◽

Cavity Surface ◽

Gaas Substrates ◽

Surface Emitting Lasers ◽

Vertical Cavity Surface ◽

Emitting Lasers ◽

Vertical Cavity

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Low series resistance OMVPE grown 850 nm vertical-cavity surface-emitting lasers on p-type GaAs substrates

Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society ◽

10.1109/leos.1996.565199 ◽

2002 ◽

Author(s):

C. Lei ◽

L.A. Hodge

Keyword(s):

Series Resistance ◽

Cavity Surface ◽

Gaas Substrates ◽

Surface Emitting Lasers ◽

Vertical Cavity Surface ◽

Emitting Lasers ◽

P Type ◽

Vertical Cavity

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Fabrication of InGaAs vertical-cavity surface-emitting lasers by molecular beam epitaxy on (4 1 1)A GaAs substrates and its room-temperature operation

Journal of Crystal Growth ◽

10.1016/s0022-0248(96)00944-x ◽

1997 ◽

Vol 175-176 ◽

pp. 359-364 ◽

Cited By ~ 2

Author(s):

Yoshihiko Hanamaki ◽

Tetsuya Takeuchi ◽

Nagaatsu Ogasawara ◽

Yasuhiro Shiraki

Keyword(s):

Molecular Beam Epitaxy ◽

Room Temperature ◽

Molecular Beam ◽

Cavity Surface ◽

Gaas Substrates ◽

Surface Emitting Lasers ◽

Vertical Cavity Surface ◽

Emitting Lasers ◽

Vertical Cavity ◽

Room Temperature Operation

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830-nm Polarization Controlled Lasing of InGaAs Quantum Wire Vertical-Cavity Surface-Emitting Lasers Grown on (775)B GaAs Substrates by Molecular Beam Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.l138 ◽

2007 ◽

Vol 46 (No. 7) ◽

pp. L138-L141 ◽

Cited By ~ 3

Author(s):

Yu Higuchi ◽

Shinji Osaki ◽

Yoshifumi Sasahata ◽

Takahiro Kitada ◽

Satoshi Shimomura ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wire ◽

Molecular Beam ◽

Cavity Surface ◽

Gaas Substrates ◽

Surface Emitting Lasers ◽

Vertical Cavity Surface ◽

Emitting Lasers ◽

Vertical Cavity

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Vertical-Cavity Surface-Emitting Lasers with Stable Polarization Grown on (411)A-Oriented GaAs Substrates

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.l864 ◽

1999 ◽

Vol 38 (Part 2, No. 8A) ◽

pp. L864-L866 ◽

Cited By ~ 5

Author(s):

Yasuhisa Kaneko ◽

Dan E. Mars ◽

Shigeru Nakagawa ◽

Yoshikatsu Ichimura ◽

Norihide Yamada

Keyword(s):

Cavity Surface ◽

Gaas Substrates ◽

Surface Emitting Lasers ◽

Vertical Cavity Surface ◽

Emitting Lasers ◽

Vertical Cavity

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Fabrication and performance of 1.3-μm vertical-cavity surface-emitting lasers with InGaAs quantum well active regions grown on GaAs substrates

10.1117/12.547272 ◽

2004 ◽

Author(s):

Rickard Marcks von Wurtemberg ◽

Petrus Sundgren ◽

Jesper Berggren ◽

Mattias Hammar ◽

Marco Ghisoni ◽

...

Keyword(s):

Quantum Well ◽

Active Regions ◽

Cavity Surface ◽

Gaas Substrates ◽

Surface Emitting Lasers ◽

Vertical Cavity Surface ◽

Emitting Lasers ◽

And Performance ◽

Vertical Cavity ◽

Ingaas Quantum Well

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