Fabrication and performance of 1.3-μm vertical-cavity surface-emitting lasers with InGaAs quantum well active regions grown on GaAs substrates

2004 ◽  
Author(s):  
Rickard Marcks von Wurtemberg ◽  
Petrus Sundgren ◽  
Jesper Berggren ◽  
Mattias Hammar ◽  
Marco Ghisoni ◽  
...  
Keyword(s):  
Quantum Well ◽  
Active Regions ◽  
Cavity Surface ◽  
Gaas Substrates ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
And Performance ◽  
Vertical Cavity ◽  
Ingaas Quantum Well

1.1-µm-Range Low-Resistance InGaAs Quantum-Well Vertical-Cavity Surface-Emitting Lasers with a Buried Type-II Tunnel Junction

2007 ◽  
Vol 46 (No. 21) ◽  
pp. L512-L514 ◽  
Author(s):  
Kenichiro Yashiki ◽  
Naofumi Suzuki ◽  
Kimiyoshi Fukatsu ◽  
Takayoshi Anan ◽  
Hiroshi Hatakeyama ◽  
...  
Keyword(s):  
Quantum Well ◽  
Tunnel Junction ◽  
Cavity Surface ◽  
Type Ii ◽  
Low Resistance ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity ◽  
Ingaas Quantum Well

Strained InGaAs quantum well vertical cavity surface emitting lasers emitting at 1.3 [micro sign]m

2006 ◽  
Vol 42 (10) ◽  
pp. 584 ◽  
Author(s):  
E. Pougeoise ◽  
Ph. Gilet ◽  
Ph. Grosse ◽  
S. Poncet ◽  
A. Chelnokov ◽  
...  
Keyword(s):  
Quantum Well ◽  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity ◽  
Ingaas Quantum Well
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