Anomalous capacitance‐voltage characteristics of BF2‐implanted and rapid thermal annealedp+‐polycrystalline silicon gate metal‐oxide‐semiconductor structures

G. Q. Lo; D. L. Kwong; S. Lee

doi:10.1063/1.103819

Anomalous capacitance‐voltage characteristics of BF2‐implanted and rapid thermal annealedp+‐polycrystalline silicon gate metal‐oxide‐semiconductor structures

Applied Physics Letters ◽

10.1063/1.103819 ◽

1990 ◽

Vol 57 (24) ◽

pp. 2573-2575 ◽

Cited By ~ 9

Author(s):

G. Q. Lo ◽

D. L. Kwong ◽

S. Lee

Keyword(s):

Metal Oxide ◽

Polycrystalline Silicon ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Capacitance Voltage

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Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures

Applied Physics Letters ◽

10.1063/1.2790787 ◽

2007 ◽

Vol 91 (13) ◽

pp. 133510 ◽

Cited By ~ 85

Author(s):

Guy Brammertz ◽

Koen Martens ◽

Sonja Sioncke ◽

Annelies Delabie ◽

Matty Caymax ◽

...

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Capacitance Voltage

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Some electrical properties of the GaAs-anodic oxide interface on the basis of measurements of the capacitance-voltage and conductance-voltage characteristics of metal-oxide-semiconductor structures

Thin Solid Films ◽

10.1016/0040-6090(88)90675-x ◽

1988 ◽

Vol 165 (1) ◽

pp. 21-28

Author(s):

St. Łos̀ ◽

St. Kochowski

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Anodic Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Oxide Interface ◽

Semiconductor Structures ◽

Capacitance Voltage

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Quasi-static capacitance–voltage characteristics of pentacene-based metal–oxide–semiconductor structures

Microelectronics Journal ◽

10.1016/j.mejo.2013.02.017 ◽

2013 ◽

Vol 44 (7) ◽

pp. 606-611 ◽

Cited By ~ 6

Author(s):

C. Ucurum ◽

H. Goebel

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Static Capacitance ◽

Capacitance Voltage

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The inflection point of the capacitance-voltage, C(VG), characteristic and the flat-band voltage of metal-oxide-semiconductor structures

Journal of Applied Physics ◽

10.1063/1.4880399 ◽

2014 ◽

Vol 115 (20) ◽

pp. 204510 ◽

Cited By ~ 9

Author(s):

H. M. Przewlocki ◽

T. Gutt ◽

K. Piskorski

Keyword(s):

Metal Oxide ◽

Inflection Point ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Flat Band ◽

Flat Band Voltage ◽

Semiconductor Structures ◽

Capacitance Voltage

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Calculation of the capacitance-voltage characteristic of GaAs, In0.53Ga0.47As, and InAs metal-oxide-semiconductor structures

Applied Physics Letters ◽

10.1063/1.3652699 ◽

2011 ◽

Vol 99 (16) ◽

pp. 163502 ◽

Cited By ~ 10

Author(s):

T. P. O’Regan ◽

P. K. Hurley

Keyword(s):

Metal Oxide ◽

Voltage Characteristic ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Capacitance Voltage

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Area dependent deep depletion behavior in the capacitance-voltage characteristics of metal-oxide-semiconductor structures with ultra-thin oxides

Journal of Applied Physics ◽

10.1063/1.3664767 ◽

2011 ◽

Vol 110 (11) ◽

pp. 114104 ◽

Cited By ~ 1

Author(s):

Kuan-Ming Chen ◽

Jenn-Gwo Hwu

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Capacitance Voltage

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Accurate determination of shallow doping profiles and interface states for metal–oxide–semiconductor structures from measured capacitance–voltage data

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.587122 ◽

1994 ◽

Vol 12 (1) ◽

pp. 342 ◽

Cited By ~ 1

Author(s):

A. L. M. Osse

Keyword(s):

Metal Oxide ◽

Accurate Determination ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Capacitance Voltage ◽

Doping Profiles

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Comparison of high‐field stress effects in metal‐oxide‐semiconductor structures with aluminum and polycrystalline silicon gates using internal photoemission measurements

Journal of Applied Physics ◽

10.1063/1.335567 ◽

1985 ◽

Vol 58 (10) ◽

pp. 3936-3939 ◽

Cited By ~ 22

Author(s):

M. M. Heyns ◽

R. F. De Keersmaecker

Keyword(s):

Metal Oxide ◽

Polycrystalline Silicon ◽

High Field ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Internal Photoemission ◽

Field Stress ◽

Stress Effects ◽

Semiconductor Structures

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Capacitance-Voltage Characterization of Atomic-Layer-Deposited Al2O3/InGaAs and Al2O3/GaAs Metal-Oxide-Semiconductor Structures

ECS Transactions ◽

10.1149/1.2355699 ◽

2019 ◽

Vol 3 (3) ◽

pp. 59-69 ◽

Cited By ~ 4

Author(s):

Peide (Peter) Ye ◽

Yi Xuan ◽

H.C. Lin

Keyword(s):

Metal Oxide ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Capacitance Voltage

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Calculation of theoretical capacitance–voltage characteristics of 6H–SiC metal–oxide–semiconductor structures

Journal of Applied Physics ◽

10.1063/1.373676 ◽

2000 ◽

Vol 88 (1) ◽

pp. 424-428 ◽

Cited By ~ 7

Author(s):

C. Raynaud

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Capacitance Voltage

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