One‐dimensional lateral‐field‐effect transistor with trench gate‐channel insulation

1990 ◽  
Vol 57 (25) ◽  
pp. 2695-2697 ◽  
Author(s):  
J. Nieder ◽  
A. D. Wieck ◽  
P. Grambow ◽  
H. Lage ◽  
D. Heitmann ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Lateral Field ◽  
One Dimensional ◽  
Effect Transistor

Electronic properties of a one‐dimensional channel field effect transistor formed by molecular beam epitaxial regrowth on patterned GaAs

1993 ◽  
Vol 63 (16) ◽  
pp. 2219-2221 ◽  
Author(s):  
J. H. Burroughes ◽  
M. L. Leadbeater ◽  
M. P. Grimshaw ◽  
R. J. Evans ◽  
D. A. Ritchie ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistor ◽  
One Dimensional ◽  
Molecular Beam Epitaxial ◽  
Epitaxial Regrowth ◽  
Effect Transistor

Quasi-One-Dimensional Performance and Benchmarking of CMOS-Based Multichannel Carbon Nanotube versus Nanowire Field-Effect Transistor Models

2015 ◽  
Vol 7 (1) ◽  
pp. 178-189
Author(s):  
Huei Chaeng Chin ◽  
Cheng Siong Lim ◽  
Kumeresan A. Danapalasingam ◽  
Vijay K. Arora ◽  
Michael Loong Peng Tan
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistor ◽  
One Dimensional ◽  
Effect Transistor

Evidence of a fully ballistic one-dimensional field-effect transistor: Experiment and simulation

2010 ◽  
Vol 97 (23) ◽  
pp. 233505 ◽  
Author(s):  
E. Grémion ◽  
D. Niepce ◽  
A. Cavanna ◽  
U. Gennser ◽  
Y. Jin
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
One Dimensional ◽  
Effect Transistor ◽  
Experiment And Simulation

Large-scale, solution-phase growth of semiconductor nanocrystals into ultralong one-dimensional arrays and study of their electrical properties

Nanoscale ◽  
2014 ◽  
Vol 6 (12) ◽  
pp. 6828-6836 ◽  
Author(s):  
Yuchao Ma ◽  
Mengmeng Xue ◽  
Jiahua Shi ◽  
Yiwei Tan
Keyword(s):  
Electrical Properties ◽  
Field Effect ◽  
Large Scale ◽  
Field Effect Transistor ◽  
Semiconductor Nanocrystals ◽  
Solution Phase ◽  
Phase Growth ◽  
One Dimensional ◽  
Effect Transistor

A series of one-dimensional assemblies of semiconductor nanocrystals with enhanced field effect transistor performance has been studied.

Amplified Emission and Field-Effect Transistor Characteristics of One-Dimensionally Structured 2,5-Bis(4-biphenylyl)thiophene Crystals

2016 ◽  
Vol 16 (4) ◽  
pp. 3200-3205 ◽  
Author(s):  
Kazumasa Hashimoto ◽  
Fumio Sasaki ◽  
Shu Hotta ◽  
Hisao Yanagi
Keyword(s):  
Field Effect ◽  
Carrier Transport ◽  
Field Effect Transistor ◽  
Optical Pumping ◽  
Hole Mobility ◽  
One Dimensional ◽  
Needle Crystal ◽  
Hole Conduction ◽  
Light Amplification ◽  
Effect Transistor

One-dimensional (1D) structures of 2,5-bis(4-biphenylyl)thiophene (BP1T) crystals are fabricated for light amplification and field-effect transistor (FET) measurements. A strip-shaped 1D structure (10 m width) made by photolitography of a vapor-deposited polycrystalline film shows amplified spontaneous emission and lasing oscillations under optical pumping. An FET fabricated with this 1D structure exhibits hole-conduction with a mobility of h = 8.0×10−3 cm2/Vs. Another 1D-structured FET is fabricated with epitaxially grown needle-like crystals of BP1T. This needle-crystal FET exhibits higher mobility of h 034 cm2/Vs. This improved hole mobility is attributed to the single-crystal channel of epitaxial needles while the grain boudaries in the polycrystalline 1D-structure decrease the carrier transport.

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