Large-scale, solution-phase growth of semiconductor nanocrystals into ultralong one-dimensional arrays and study of their electrical properties

Nanoscale ◽  
2014 ◽  
Vol 6 (12) ◽  
pp. 6828-6836 ◽  
Author(s):  
Yuchao Ma ◽  
Mengmeng Xue ◽  
Jiahua Shi ◽  
Yiwei Tan
Keyword(s):  
Electrical Properties ◽  
Field Effect ◽  
Large Scale ◽  
Field Effect Transistor ◽  
Semiconductor Nanocrystals ◽  
Solution Phase ◽  
Phase Growth ◽  
One Dimensional ◽  
Effect Transistor

A series of one-dimensional assemblies of semiconductor nanocrystals with enhanced field effect transistor performance has been studied.

scholarly journals Enhancement of organic field-effect transistor performance by incorporating functionalized double-walled carbon nanotubes

RSC Advances ◽  
2017 ◽  
Vol 7 (49) ◽  
pp. 30626-30631 ◽  
Author(s):  
Yingli Chu ◽  
Xiaohan Wu ◽  
Juan Du ◽  
Jia Huang
Keyword(s):  
Carbon Nanotubes ◽  
Electrical Properties ◽  
Organic Electronics ◽  
Field Effect ◽  
Large Scale ◽  
Field Effect Transistor ◽  
Organic Field Effect Transistor ◽  
Effect Transistor ◽  
Double Walled Carbon Nanotubes ◽  
Walled Carbon Nanotubes

Excellent electrical properties and large-scale fabrication are essential for extending the application of flexible organic electronics in practice.

Tailoring the electrical properties of MoTe2 field effect transistor via chemical doping

2019 ◽  
Vol 135 ◽  
pp. 106247 ◽  
Author(s):  
M.W. Iqbal ◽  
Aliya Amin ◽  
M.A. Kamran ◽  
Hira Ateeq ◽  
Ehsan Elahi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Chemical Doping ◽  
Effect Transistor

scholarly journals High-performance monolayer MoS2 field-effect transistor with large-scale nitrogen-doped graphene electrodes for Ohmic contact

2019 ◽  
Vol 115 (1) ◽  
pp. 012104 ◽  
Author(s):  
Dongjea Seo ◽  
Dong Yun Lee ◽  
Junyoung Kwon ◽  
Jea Jung Lee ◽  
Takashi Taniguchi ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Field Effect ◽  
High Performance ◽  
Large Scale ◽  
Field Effect Transistor ◽  
Monolayer Mos2 ◽  
Nitrogen Doped ◽  
Nitrogen Doped Graphene ◽  
Doped Graphene ◽  
Effect Transistor

scholarly journals Photo-Induced Doping in a Graphene Field-Effect Transistor with Inkjet-Printed Organic Semiconducting Molecules

Nanomaterials ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 1753 ◽  
Author(s):  
Nikita Nekrasov ◽  
Dmitry Kireev ◽  
Nejra Omerović ◽  
Aleksei Emelianov ◽  
Ivan Bobrinetskiy
Keyword(s):  
Inkjet Printing ◽  
Field Effect ◽  
Large Scale ◽  
Field Effect Transistor ◽  
Organic Molecules ◽  
Electronic Device ◽  
Chemical Vapor ◽  
Device Fabrication ◽  
Effect Transistor ◽  
Organic Semiconducting Molecules

In this work, we report a novel method of maskless doping of a graphene channel in a field-effect transistor configuration by local inkjet printing of organic semiconducting molecules. The graphene-based transistor was fabricated via large-scale technology, allowing for upscaling electronic device fabrication and lowering the device’s cost. The altering of the functionalization of graphene was performed through local inkjet printing of N,N′-Dihexyl-3,4,9,10-perylenedicarboximide (PDI-C6) semiconducting molecules’ ink. We demonstrated the high resolution (about 50 µm) and accurate printing of organic ink on bare chemical vapor deposited (CVD) graphene. PDI-C6 forms nanocrystals onto the graphene’s surface and transfers charges via π–π stacking to graphene. While the doping from organic molecules was compensated by oxygen molecules under normal conditions, we demonstrated the photoinduced current generation at the PDI-C6/graphene junction with ambient light, a 470 nm diode, and 532 nm laser sources. The local (in the scale of 1 µm) photoresponse of 0.5 A/W was demonstrated at a low laser power density. The methods we developed open the way for local functionalization of an on-chip array of graphene by inkjet printing of different semiconducting organic molecules for photonics and electronics.

Electrical properties of Bi3.25La0.75Ti3O12/LaAlO3/Si structures for ferroelectric field effect transistor applications

2004 ◽  
Vol 37 (6) ◽  
pp. 832-835 ◽  
Author(s):  
Yi-Jun Wang ◽  
Ai-Dong Li ◽  
Di Wu ◽  
Qi-Yue Shao ◽  
Hui-Qin Ling ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor
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