Grain growth kinetics during ion beam irradiation of chemical vapor deposited amorphous silicon

1990 ◽  
Vol 57 (6) ◽  
pp. 554-556 ◽  
Author(s):  
C. Spinella ◽  
S. Lombardo ◽  
S. U. Campisano
Keyword(s):  
Amorphous Silicon ◽  
Grain Growth ◽  
Growth Kinetics ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Chemical Vapor Deposited ◽  
Grain Growth Kinetics

Growth kinetics of CoSi formed by ion beam irradiation at room temperature

1997 ◽  
Vol 82 (11) ◽  
pp. 5480-5483 ◽  
Author(s):  
A. Baba ◽  
H. Aramaki ◽  
T. Sadoh ◽  
T. Tsurushima
Keyword(s):  
Growth Kinetics ◽  
Room Temperature ◽  
Ion Beam ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Kinetics Of

Pretilt angle control of carbon incorporated amorphous silicon oxide treated by ion beam irradiation

2007 ◽  
Vol 106 (1) ◽  
pp. 54-57 ◽  
Author(s):  
Kyung Chan Kim ◽  
Han Jin Ahn ◽  
Jong Bok Kim ◽  
Byoung Har Hwang ◽  
Jong Tae Kim ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Silicon Oxide ◽  
Ion Beam ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Amorphous Silicon Oxide ◽  
Pretilt Angle

Amorphous to Polycrystal Transition Assisted by Ion Beam Irradiation in Silicon

1989 ◽  
Vol 157 ◽  
Author(s):  
C. Spinella ◽  
S. Lombardo ◽  
S. U. Campisano
Keyword(s):  
Cluster Size ◽  
Thermal Process ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Irradiation Temperature ◽  
Ion Beam Irradiation ◽  
Critical Cluster ◽  
Chemical Vapor Deposited ◽  
Critical Cluster Size

ABSTRACTThe ion beam induced growth of isolated silicon grains has been studied in chemical vapor deposited amorphous layers. The crystal radius increases linearly with the 1on dose and the growth rate depends in a complex way on the irradiation temperature in the 320 - 480 °C investigated temperature range. The grain density does not depend on the ion dose but it increases exponentially with increasing irradiation temperature. The grain density obtained after a pure thermal process on similar samples is In any case larger than the density appearing after ion irradiation. These facts may be explained by assuming that during ion irradiation only pre-existing seeds whose size is larger than a critical value can grow. This critical cluster size is larger than the critical cluster size for a pure thermal process.

Grain Growth in Nanocrystalline Metal Thin Films under In Situ Ion-Beam Irradiation

2007 ◽  
Vol 4 (8) ◽  
pp. 100743 ◽  
Author(s):  
D. Kaoumi ◽  
A. T. Motta ◽  
R. C. Birtcher ◽  
R. Lott ◽  
S. W. Dean
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Ion Beam ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Nanocrystalline Metal ◽  
Metal Thin Films

Crystal-amorphous-silicon interface kinetics under ion beam irradiation

1990 ◽  
Vol 41-42 ◽  
pp. 619-626 ◽  
Author(s):  
F. Priolo ◽  
A. La Ferla ◽  
C. Spinella ◽  
E. Rimini ◽  
S.U. Campisano ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Ion Beam ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Interface Kinetics ◽  
Silicon Interface

Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

1981 ◽  
Vol 39 ◽  
pp. 162-163
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Interfacial Reactions ◽  
Practical Applications ◽  
Microelectronic Devices ◽  
Recent Emergence ◽  
Chemical Vapor Deposited ◽  
Atomic Mixing ◽  
Silicon Interface ◽  
Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

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