Evidence for a stretched‐exponential description of optical defect generation in hydrogenated amorphous silicon

1990 ◽  
Vol 57 (1) ◽  
pp. 79-80 ◽  
Author(s):  
Richard H. Bube ◽  
Lisa Echeverria ◽  
David Redfield
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Stretched Exponential ◽  
Defect Generation ◽  
Hydrogenated Amorphous

Effect of Deposition-Induced Annealable Defects on Light-Induced Defect Generation in a-Si:H

1993 ◽  
Vol 297 ◽  
Author(s):  
Jong-Hwan Yoon
Keyword(s):  
Amorphous Silicon ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Generation Rate ◽  
Defect Generation ◽  
Saturated State ◽  
Microscopic Models ◽  
Hydrogenated Amorphous ◽  
Substrate Temperatures

In this paper we present a method to determine the annealable defect density(ΔNann) present in hydrogenated amorphous silicon(a-Si:H). The effects of the annealable defects on the light-induced defect generation rate, saturated defect density (Nsat) and the change of defect density in the light-induced saturated state(ΔNsat) have been studied. Annealable defect density was varied by depositing samples at various substrate temperatures or by post-growth anneals of samples grown at low substrate temperatures. It is found that the generation rate, N satand ΔNsat are well correlated with ΔNann. In particular, the ΔNsat is found to follow a relation ΔNsat ≈ ΔNann. These results suggest that defect-related microscopic models are appropriate for light-induced metastability.

scholarly journals Temperature-Dependent Open-Circuit Voltage Measurements and Light-Soaking in Hydrogenated Amorphous Silcon Solar Cells

2005 ◽  
Vol 862 ◽  
Author(s):  
Jianjun Liang ◽  
E. A. Schiff ◽  
S. Guha ◽  
B. Yan ◽  
J. Yang
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Room Temperature ◽  
Open Circuit Voltage ◽  
Hydrogenated Amorphous Silicon ◽  
Open Circuit ◽  
Illumination Intensity ◽  
Temperature Dependent ◽  
Defect Generation ◽  
Hydrogenated Amorphous

AbstractWe present temperature-dependent measurements of the open-circuit voltage VOC(T) in hydrogenated amorphous silicon nip solar cells prepared at United Solar. At room-temperature and above, VOC measured using near-solar illumination intensity differs by as much as 0.04 V for the as-deposited and light-soaked states; the values of VOC for the two states converge below 250 K. Models for VOC based entirely on recombination through deep levels (dangling bonds) do not account for the convergence effect. The convergence is present in a model that assumes the recombination traffic in the as-deposited state involves only bandtails, but which splits the recombination traffic fairly evenly between bandtails and defects for the light-soaked state at room-temperature. Recombination mechanisms are important in understanding light-soaking, and the present results are inconsistent with at least one well-known model for defect generation.

New Model for “Stretched Exponential” Relaxation

1996 ◽  
Vol 420 ◽  
Author(s):  
Chris G. Van De Walle
Keyword(s):  
Experimental Data ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Statistical Distributions ◽  
New Model ◽  
Stretched Exponential ◽  
Careful Treatment ◽  
Exponential Relaxation ◽  
Hydrogenated Amorphous

AbstractA new model to explain stretched exponential relaxation in hydrogenated amorphous silicon is presented. The model does not invoke statistical distributions; rather, it is based on a careful treatment of diffusion, including retrapping. Excellent fits to a variety of experimental data are obtained.

scholarly journals Metastable-defect generation in hydrogenated amorphous silicon

1994 ◽  
Vol 50 (3) ◽  
pp. 1551-1556 ◽  
Author(s):  
Qing Zhang ◽  
Hideki Takashima ◽  
Jiang-Huai Zhou ◽  
Minoru Kumeda ◽  
Tatsuo Shimizu
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Defect Generation ◽  
Hydrogenated Amorphous ◽  
Metastable Defect
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