Real‐time detection of higher hydrides on the growing surface of hydrogenated amorphous silicon by infrared reflection absorption spectroscopy

1990 ◽  
Vol 57 (10) ◽  
pp. 1028-1030 ◽  
Author(s):  
Yasutake Toyoshima ◽  
Kazuo Arai ◽  
Akihisa Matsuda ◽  
Kazunobu Tanaka
Keyword(s):  
Amorphous Silicon ◽  
Real Time ◽  
Absorption Spectroscopy ◽  
Hydrogenated Amorphous Silicon ◽  
Infrared Reflection Absorption Spectroscopy ◽  
Infrared Reflection ◽  
Real Time Detection ◽  
Hydrogenated Amorphous

In-Situ Monitoring of Surface Hydrogen on the a-SiGe:H Films

1997 ◽  
Vol 467 ◽  
Author(s):  
Y. Toyoshima ◽  
G. Ganguly ◽  
T. Ikeda ◽  
K. Saitoh ◽  
M. Kondo ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Hydrogenated Amorphous Silicon ◽  
Reaction Scheme ◽  
In Situ Monitoring ◽  
Alloy Films ◽  
Surface Hydrogen ◽  
Infrared Reflection ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous

ABSTRACTThe bonded hydrogen on the growing surface of hydrogenated amorphous silicon germanium (a-SiGe:H) alloy films has been investigated by use of infrared reflection absorption spectroscopy (IR-RAS). When the alloy films are Si-rich, the surface hydrogen bonded to Si atoms is found to behave in a similar way to those on the hydrogenated amorphous silicon (a-Si:H) films. This means that the thermal desorption stability of surface Si hydride species is not significantly affected by the coexistence of a small amount (typically 20 at.%) of Ge. On the contrary, the desorption behavior of surface hydrogen depends on the alloy composition when the a-SiGe:H films are Ge-rich. A surface reaction scheme is provided in an attempt to explain this series of behavior in surface hydrogen on the a-SiGe:H films.

Real Time Monitoring of the Crystallization of Hydrogenated Amorphous Silicon

2005 ◽  
Vol 862 ◽  
Author(s):  
Paul Stradins ◽  
David Young ◽  
Howard M. Branz ◽  
Matthew Page ◽  
Qi Wang
Keyword(s):  
Amorphous Silicon ◽  
Real Time ◽  
Interference Fringe ◽  
Time Window ◽  
Solid Phase ◽  
Hydrogenated Amorphous Silicon ◽  
Optical Reflectance ◽  
Cutoff Energy ◽  
Hydrogenated Amorphous

AbstractIn-situ real-time optical reflectance spectroscopy is applied to investigate structural changes as hydrogenated amorphous silicon (a-Si:H) loses H and crystallizes at elevated temperature. The interference fringe spectrum (cutoff energy and amplitude) mainly characterize changes in the bulk, while the the crystal Si (c-Si) direct-transition ultra-violet reflectance signatures reveal the presence of any crystalline phase at the surface. Effusion of atomic hydrogen is monitored by a decrease of the interference fringe cutoff energy and is thermally activated with about 1.7 eV. In a-Si:H on glass, optical reflectance spectra are consistent with 2.8 eV activated homogeneous nucleation and growth of a small grain (˜ 100 nm) polycrystalline phase. In contrast, a-Si:H on c-Si crystallizes by solid phase epitaxy with very different spectral kinetics. Our measurements reveal the temperature-time window for thermal crystallization of a-Si:H for photovoltaic device applications, and highlight the versatility of the in-situ spectral reflectance monitoring.

Structure of platinum-hydrogenated amorphous silicon interfaces studied by fluorescence-detected x-ray absorption spectroscopy

1985 ◽  
Vol 77-78 ◽  
pp. 1023-1026 ◽  
Author(s):  
Hiroyuki Oyanagi ◽  
Akihisa Matsuda ◽  
Tadashi Matsushita ◽  
Hidetoshi Okushi ◽  
Takehiko Ishiguro ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Absorption Spectroscopy ◽  
Hydrogenated Amorphous Silicon ◽  
X Ray ◽  
X Ray Absorption ◽  
Hydrogenated Amorphous
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