scholarly journals Effect of spacer layer thickness on the static characteristics of resonant tunneling diodes

1990 ◽  
Vol 57 (9) ◽  
pp. 899-901 ◽  
Author(s):  
I. Mehdi ◽  
R. K. Mains ◽  
G. I. Haddad
Keyword(s):  
Layer Thickness ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Static Characteristics ◽  
Tunneling Diodes ◽  
Spacer Layer Thickness ◽  
Spacer Layer

Effect of Spacer Layer Thickness on Energy Level Width Narrowing in GaInAs/InP Resonant Tunneling Diodes Grown by Organo-Metallic Vapor Phase Epitaxy

1998 ◽  
Vol 37 (Part 1, No. 2) ◽  
pp. 445-449 ◽  
Author(s):  
Takashi Oobo ◽  
Riichiro Takemura ◽  
Ken Sato ◽  
Michihiko Suhara ◽  
Yasuyuki Miyamoto ◽  
...  
Keyword(s):  
Energy Level ◽  
Layer Thickness ◽  
Vapor Phase ◽  
Resonant Tunneling ◽  
Vapor Phase Epitaxy ◽  
Tunneling Diodes ◽  
Level Width ◽  
Spacer Layer Thickness ◽  
Spacer Layer ◽  
Metallic Vapor

Undoped spacer layer effects on the evaluation of the coherent length in GaInAs/InP resonant tunneling diodes

1996 ◽  
Vol 227 (1-4) ◽  
pp. 210-212 ◽  
Author(s):  
Y.C. Kang ◽  
M. Suhara ◽  
K. Furuya ◽  
M. Gault ◽  
R. Takemura
Keyword(s):  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes ◽  
Spacer Layer

Variation of the spacer layer between two resonant tunneling diodes

1989 ◽  
Vol 55 (18) ◽  
pp. 1871-1873 ◽  
Author(s):  
E. Wolak ◽  
B. G. Park ◽  
K. L. Lear ◽  
J. S. Harris
Keyword(s):  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes ◽  
Spacer Layer

Nanofabricated SiO2-Si-SiO2 Resonant Tunneling Diodes

2000 ◽  
Vol 631 ◽  
Author(s):  
J. G. Fleming ◽  
E. Chow ◽  
S.-Y. Lin
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Resonance Tunneling ◽  
Tunneling Diodes

ABSTRACTResonance Tunneling Diodes (RTDs) are devices that can demonstrate very highspeed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. We report here the first demonstration of SiO2-Si-SiO2 RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.

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