Variation of the spacer layer between two resonant tunneling diodes

1989 ◽  
Vol 55 (18) ◽  
pp. 1871-1873 ◽  
Author(s):  
E. Wolak ◽  
B. G. Park ◽  
K. L. Lear ◽  
J. S. Harris
Keyword(s):  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes ◽  
Spacer Layer

Undoped spacer layer effects on the evaluation of the coherent length in GaInAs/InP resonant tunneling diodes

1996 ◽  
Vol 227 (1-4) ◽  
pp. 210-212 ◽  
Author(s):  
Y.C. Kang ◽  
M. Suhara ◽  
K. Furuya ◽  
M. Gault ◽  
R. Takemura
Keyword(s):  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes ◽  
Spacer Layer

Nanofabricated SiO2-Si-SiO2 Resonant Tunneling Diodes

2000 ◽  
Vol 631 ◽  
Author(s):  
J. G. Fleming ◽  
E. Chow ◽  
S.-Y. Lin
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Resonance Tunneling ◽  
Tunneling Diodes

ABSTRACTResonance Tunneling Diodes (RTDs) are devices that can demonstrate very highspeed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. We report here the first demonstration of SiO2-Si-SiO2 RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.

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