Continuously graded‐index separate confinement heterostructure multiquantum well Ga1−xInxAs1−yPy/InP ridge waveguide lasers grown by low‐pressure metalorganic chemical vapor deposition with lattice‐matched quaternary wells and barriers

1990 ◽  
Vol 57 (15) ◽  
pp. 1493-1495 ◽  
Author(s):  
M. J. Ludowise ◽  
T. R. Ranganath ◽  
A. Fischer‐Colbrie
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Ridge Waveguide ◽  
Graded Index ◽  
Waveguide Lasers ◽  
Lattice Matched ◽  
Ridge Waveguide Lasers ◽  
Metalorganic Chemical

Growth of High Nitrogen Content GaAsN by Metalorganic Chemical Vapor Deposition

2001 ◽  
Vol 692 ◽  
Author(s):  
J. C. Roberts ◽  
B. F. Moody ◽  
P. Barletta ◽  
M. E. Aumer ◽  
S. F. LeBoeuf ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Nitrogen Concentration ◽  
Chemical Vapor ◽  
High Nitrogen Content ◽  
Recent Interest ◽  
The Subject ◽  
Lattice Matched ◽  
Metalorganic Chemical

AbstractThe incorporation of a high percentage of nitrogen in the GaAs lattice has been the subject of recent interest to reduce the bandgap while maintaining the nearly lattice matched condition to GaAs. We will report on the metalorganic chemical vapor deposition (MOCVD) of GaAsN using trimethylgallium (TMG), tertiarybutylarsine (TBA) and dimethylhydrazine (DMHy) organometallic sources in a hydrogen-free carrier gas. A nitrogen concentration as high as ∼8% in GaAsN was achieved. The effect of nitrogen concentration on the structural, optical and surface properties of GaAsN films will be discussed.

scholarly journals Metalorganic chemical vapor deposition of InN quantum dots and nanostructures

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Chemical Vapor ◽  
Electromagnetic Spectrum ◽  
Material System ◽  
Metalorganic Chemical

AbstractUsing one material system from the near infrared into the ultraviolet is an attractive goal, and may be achieved with (In,Al,Ga)N. This III-N material system, famous for enabling blue and white solid-state lighting, has been pushing towards longer wavelengths in more recent years. With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by III-As and III-P technology. As has been the case in these other III–V material systems, nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic devices. In the case of InN, these nanostructures have been in the development stage for some time, with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device structures. This review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures, focusing on how precursor choices, crystallographic orientation, and other growth parameters affect the deposition. The optical properties of InN nanostructures will also be assessed, with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes, laser diodes, and photodetectors.

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