Control of internal stress and Young’s modulus of Si3N4and polycrystalline silicon thin films using the ion implantation technique

1990 ◽  
Vol 56 (14) ◽  
pp. 1314-1316 ◽  
Author(s):  
Osamu Tabata ◽  
Susumu Sugiyama ◽  
Mitsuharu Takigawa
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Internal Stress ◽  
Young’S Modulus ◽  
Polycrystalline Silicon ◽  
Young's Modulus ◽  
Implantation Technique ◽  
Silicon Thin Films

Micro Structures and Mechanical Characters of Hydrogenated Nanocrystalline Silicon Thin Films with Different Doped Proportions

2010 ◽  
Vol 43 ◽  
pp. 53-56
Author(s):  
Jian Ning Ding ◽  
Hui Juan Fan ◽  
Li Qiang Guo ◽  
Zhen Fan ◽  
Guang Gui Cheng ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectrum ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Flow Rate Ratio ◽  
Glass Substrates ◽  
Silicon Thin Films ◽  
Mechanical Characters

Hydrogenated nanocrystalline silicon (nc-Si:H) films were deposited on glass substrates using Radio frequency plasma-enhanced chemical vapor deposition(RF-PECVD)from a B2H6/SiH4/H2 gas mixtures. In this paper, we mainly changed the Borane-Silane flow rate ratio (β), while other parameters were kept constant. Raman spectrum and X-ray diffraction were employed to investigate the micro-structure of the films, and the indentations were used to measure the mechanical characters (the Young’s modulus (E) and hardness (H)). The Raman spectrum showed that, withβincreasing the crystalline fraction decreased, which indicated that more boron doped might not be propitious to the formation of crystalline of the thin films. XRD spectrum revealed that the films have a remarkably preferential orientation. The analysis of the Young’s modulus and hardness by TriboIndenter nano system suggested that the increase inβhad concernful effects in the decrease of E and H values, so we can control the mechanical characters of the thin films by means of changing the doped concentrations. In view of these results, it may be concluded that the use of lowβconditions might lead to growth of nc-Si:H films with high crystallinity, and as well high Young’s modulus and hardness.

scholarly journals Out-of-Plane Thermal Expansion Coefficient and Biaxial Young’s Modulus of Sputtered ITO Thin Films

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 153
Author(s):  
Chuen-Lin Tien ◽  
Tsai-Wei Lin
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Thermal Stress ◽  
Young’S Modulus ◽  
Thermal Expansion Coefficient ◽  
Expansion Coefficient ◽  
Young's Modulus ◽  
Heating Temperature ◽  
Glass Substrates ◽  
Ito Thin Films

This paper proposes a measuring apparatus and method for simultaneous determination of the thermal expansion coefficient and biaxial Young’s modulus of indium tin oxide (ITO) thin films. ITO thin films simultaneously coated on N-BK7 and S-TIM35 glass substrates were prepared by direct current (DC) magnetron sputtering deposition. The thermo-mechanical parameters of ITO thin films were investigated experimentally. Thermal stress in sputtered ITO films was evaluated by an improved Twyman–Green interferometer associated with wavelet transform at different temperatures. When the heating temperature increased from 30 °C to 100 °C, the tensile thermal stress of ITO thin films increased. The increase in substrate temperature led to the decrease of total residual stress deposited on two glass substrates. A linear relationship between the thermal stress and substrate heating temperature was found. The thermal expansion coefficient and biaxial Young’s modulus of the films were measured by the double substrate method. The results show that the out of plane thermal expansion coefficient and biaxial Young’s modulus of the ITO film were 5.81 × 10−6 °C−1 and 475 GPa.

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