Very low threshold current density 1.5 μm GaInAs/AlGaInAs graded‐index separate‐confinement‐heterostructure strained quantum well laser diodes grown by organometallic chemical vapor deposition

1991 ◽  
Vol 59 (20) ◽  
pp. 2486-2488 ◽  
Author(s):  
A. Kasukawa ◽  
R. Bhat ◽  
C. E. Zah ◽  
M. A. Koza ◽  
T. P. Lee
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Laser Diodes ◽  
Chemical Vapor ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Graded Index ◽  
Quantum Well Laser ◽  
Low Threshold ◽  
Strained Quantum Well

1.5 µm GaInAs/AlGaInAs Graded-Index Separate-Confinement-Heterostructure Quantum Well Laser Diodes Grown by Organometallic Chemical Vapor Deposition

1992 ◽  
Vol 31 (Part 1, No. 5A) ◽  
pp. 1365-1371 ◽  
Author(s):  
Akihiko Kasukawa ◽  
Rajaram Bhat ◽  
Catherine Caneau ◽  
Nicholas C. Andreadakis ◽  
Bhadresh Pathak ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Well ◽  
Vapor Deposition ◽  
Laser Diodes ◽  
Chemical Vapor ◽  
Graded Index ◽  
Quantum Well Laser ◽  
Organometallic Chemical Vapor Deposition

GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

1998 ◽  
Vol 3 ◽  
Author(s):  
P. Kung ◽  
A. Saxler ◽  
D. Walker ◽  
A. Rybaltowski ◽  
Xiaolong Zhang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Well ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Multi Quantum Well ◽  
Metalorganic Chemical

We report the growth, fabrication and characterization of GaInN/GaN multi-quantum well lasers grown on (00·1) sapphire substrates by low pressure metalorganic chemical vapor deposition. The threshold current density of a 1800 μm long cavity length laser was 1.4 kA/cm2 with a threshold voltage of 25 V. These lasers exhibited series resistances of 13 and 14 Ω at 300 and 79 K, respectively.

Extremely low threshold current density InGaAs/GaAs/AIGaAs strained SQW laser grown by MBE with As2

1996 ◽  
Vol 74 (S1) ◽  
pp. 1-4 ◽  
Author(s):  
M. Dion ◽  
Z. R. Wasilewski ◽  
F. Chatenoud ◽  
V. K. Gupta ◽  
A. R. Pratt ◽  
...  
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Single Quantum Well ◽  
Graded Index ◽  
Quantum Well Laser ◽  
Gaas Barrier ◽  
Low Threshold ◽  
Cladding Layers

In this report, we present data on an InGaAs/GaAs strained single quantum well laser with the lowest reported threshold current density to date, namely 44 A cm−2 for a 3 mm cavity length. This was grown by solid-source molecular-beam epitaxy with the arsenic dimer, As2. The structure is that of a graded-index, separate-confinement heterostructure with a single strained InGaAs quantum well, sandwiched between GaAs barrier layers and AlGaAs cladding layers. The wavelength of the lasers was around 985 nm, and the internal efficiency and losses were 69% and 0.70 cm−1, respectively. In addition, data on the uniformity of our lasers, which are grown on rotating 2 in substrates (1 in = 2.54 cm), show drops in photoluminescence emission wavelength and layer thickness of less than 4 nm and 4%, respectively, from the centre to the edge of the wafer and very little compositional change.

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