Electron focusing with multiparallel one‐dimensional channels made by focused ion beam

1990 ◽  
Vol 56 (4) ◽  
pp. 385-387 ◽  
Author(s):  
K. Nakamura ◽  
D. C. Tsui ◽  
F. Nihey ◽  
H. Toyoshima ◽  
T. Itoh
1987 ◽  
Vol 51 (20) ◽  
pp. 1620-1622 ◽  
Author(s):  
Toshiro Hiramoto ◽  
Kazuhiko Hirakawa ◽  
Yasuhiro Iye ◽  
Toshiaki Ikoma

2006 ◽  
Vol 8 (7) ◽  
pp. S550-S553 ◽  
Author(s):  
S Cabrini ◽  
L Businaro ◽  
M Prasciolu ◽  
A Carpentiro ◽  
D Gerace ◽  
...  

2016 ◽  
Vol 16 (4) ◽  
pp. 3312-3317 ◽  
Author(s):  
Hiroyuki Yamamoto ◽  
Keiji Obara ◽  
Shohei Higashihara ◽  
Yuki Obama ◽  
Takeshi Yamao ◽  
...  

We have succeeded in directly engraving one-dimensional diffraction gratings on the surface of organic semiconducting oligomer crystals by using focused ion beam (FIB) lithography and laser ablation (LA) methods. The FIB method enabled us to shape the gratings with varying periods down to ∼150 nm. With the LA method a large-area grating with a ∼500-nm period was readily accessible. All the above crystals indicated spectrally-narrowed emission (SNE) lines even in the case of shallow groove depths ∼2–4 nm. In particular, we definitively observed the SNE pertinent to the first-order diffraction with the crystal having the diffraction grating of a 148.3-nm average period. The present results indicate utility of the built-in gratings that can directly be fabricated on the surface of the crystals.


Author(s):  
Satoshi Usui ◽  
Mina Nishi ◽  
Naoki Shikazono ◽  
Nobuhide Kasagi

A numerical simulation tool to predict the performance of a tubular SOFC is developed. For the convenience of the infrastructure, it has become more important to consider feeding hydrocarbon fuels like methane, which would be widely used, rather than hydrogen. Although it is well known that the performance of an SOFC drops largely when methane is fed compared with hydrogen, the reason for this is not yet well explained and thus prevents efficiently constructing an optimized SOFC system. Therefore, the present investigation is carried out to clarify how an SOFC performs when different fuels are fed. The calculation based on one-dimensional computation is carried out by introducing the parameters of actual electrode microstructures, obtained from the images taken by the focused ion beam scanning electron microscope (FIB-SEM). Values are adapted in calculating the ohmic, activation and concentration overpotentials. Proper experiments were also carried out to verify the validity of the numerical simulation. Although slight errors are found in the calculation results for fuels with high steam concentration, performances of hydrogen and methane fed cells were well predicted. Temperature distribution within the cell is also clearly shown. Through the present investigation, the performance drop, when the fuel is changed from hydrogen to methane, is found mainly caused by the temperature distribution of the cell that gives a concrete guide to construct an SOFC system.


2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Maja D. Bachmann ◽  
Aaron L. Sharpe ◽  
Arthur W. Barnard ◽  
Carsten Putzke ◽  
Markus König ◽  
...  

Abstract Geometric electron optics may be implemented in solids when electron transport is ballistic on the length scale of a device. Currently, this is realized mainly in 2D materials characterized by circular Fermi surfaces. Here we demonstrate that the nearly perfectly hexagonal Fermi surface of PdCoO2 gives rise to highly directional ballistic transport. We probe this directional ballistic regime in a single crystal of PdCoO2 by use of focused ion beam (FIB) micro-machining, defining crystalline ballistic circuits with features as small as 250 nm. The peculiar hexagonal Fermi surface naturally leads to enhanced electron self-focusing effects in a magnetic field compared to circular Fermi surfaces. This super-geometric focusing can be quantitatively predicted for arbitrary device geometry, based on the hexagonal cyclotron orbits appearing in this material. These results suggest a novel class of ballistic electronic devices exploiting the unique transport characteristics of strongly faceted Fermi surfaces.


1996 ◽  
Vol 68 (6) ◽  
pp. 826-828 ◽  
Author(s):  
B. Kardynal/ ◽  
E. H. Linfield ◽  
D. A. Ritchie ◽  
K. M. Brown ◽  
C. H. W. Barnes ◽  
...  

2013 ◽  
Vol 113 (4) ◽  
pp. 044308 ◽  
Author(s):  
J. L. Gray ◽  
P. L. Nichols ◽  
R. Hull ◽  
J. A. Floro

2021 ◽  
Vol 2086 (1) ◽  
pp. 012007
Author(s):  
M M Eremenko ◽  
N A Shandyba ◽  
N E Chernenko ◽  
M S Solodovnik ◽  
S V Balakirev ◽  
...  

Abstract In this work, we studied the effect of the deposition thickness, growth rate, arsenic flux, and implantation dose on the morphology of the GaAs nanostructures grown on modified Si areas. It is shown that an increase in the growth rate at the initial stages of the growth process leads to the transition of the growth regime from layered-like to one-dimensional with the formation of nanowires. Studies of the effect of As4 pressure have shown that a change in the equivalent As4 flux in the range of 3.7 - 5.0 ML/s does not lead to any significant change in the structure of the GaAs layer in the modified areas. An increase in the implantation dose during processing with a focused ion beam led to disordering of the directions of the grown nanowires due to the degradation of the substrate crystal structure.


2011 ◽  
Vol 10 (01n02) ◽  
pp. 7-12 ◽  
Author(s):  
NITUL S. RAJPUT ◽  
ABHISHEK K. SINGH ◽  
NEERAJ SHUKLA ◽  
VISHWAS N. KULKARNI

Nanowires of Au and Cu were fabricated using a top–down method in which focused ion beam (FIB) milling process has been used. The width of the fabricated nanowires has been kept in the range of 45 to 300 nm and the length in the range of 2–10 μm. In situ electrical measurements of the nanowires were carried out. The resistivities of these wires are found to be higher (five to nine times larger than their bulk values). These results have been understood on the basis of increase in the electron surface scattering due to one-dimensional confinement of the electrons. Also, other effects such as nanogap formation in the range of 40 nm to few hundreds of nanometers, structural changes of the wires, increase of current density with time at constant applied voltage, etc. have been observed during measurements.


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