AlxGa1−xAs‐GaAs vertical‐cavity surface‐emitting laser grown on Si substrate

1990 ◽  
Vol 56 (8) ◽  
pp. 740-742 ◽  
Author(s):  
D. G. Deppe ◽  
Naresh Chand ◽  
J. P. van der Ziel ◽  
G. J. Zydzik
Keyword(s):  
Cavity Surface ◽  
Si Substrate ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

Low-Loss Optical Interposer with Recessed Vertical-Cavity Surface-Emitting Laser Diode and Photodiode Chips into Si Substrate

2008 ◽  
Vol 47 (4) ◽  
pp. 2936-2940 ◽  
Author(s):  
Makoto Fujiwara ◽  
Shinsuke Terada ◽  
Yoji Shirato ◽  
Hiroshi Owari ◽  
Kei Watanabe ◽  
...  
Keyword(s):  
Laser Diode ◽  
Cavity Surface ◽  
Si Substrate ◽  
Low Loss ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

Room-Temperature Operation of Vertical-Cavity Surface-Emitting Laser on Si Substrate

1993 ◽  
Author(s):  
Takashi EGAWA ◽  
Yoshiaki HASEGAWA ◽  
Tsunemasa DEGUCHI ◽  
Takashi JIMBO ◽  
Masayoshi UMENO
Keyword(s):  
Room Temperature ◽  
Cavity Surface ◽  
Si Substrate ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity ◽  
Room Temperature Operation

Characterization of AlGaAs/GaAs vertical-cavity surface-emitting laser diode grown on Si substrate by MOCVD

1997 ◽  
Vol 117-118 ◽  
pp. 771-775 ◽  
Author(s):  
Takashi Egawa ◽  
Yoshihiko Murata ◽  
Takashi Jimbo ◽  
Masayoshi Umeno
Keyword(s):  
Laser Diode ◽  
Cavity Surface ◽  
Si Substrate ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity
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