Room-temperature pulsed operation of AlGaAs/GaAs vertical-cavity surface-emitting laser diode on Si substrate

1994 ◽  
Vol 6 (6) ◽  
pp. 681-683 ◽  
Author(s):  
T. Egawa ◽  
Y. Hasegawa ◽  
T. Jimbo ◽  
M. Umeno
Keyword(s):  
Laser Diode ◽  
Room Temperature ◽  
Cavity Surface ◽  
Si Substrate ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

Low-Loss Optical Interposer with Recessed Vertical-Cavity Surface-Emitting Laser Diode and Photodiode Chips into Si Substrate

2008 ◽  
Vol 47 (4) ◽  
pp. 2936-2940 ◽  
Author(s):  
Makoto Fujiwara ◽  
Shinsuke Terada ◽  
Yoji Shirato ◽  
Hiroshi Owari ◽  
Kei Watanabe ◽  
...  
Keyword(s):  
Laser Diode ◽  
Cavity Surface ◽  
Si Substrate ◽  
Low Loss ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

Room-Temperature Operation of Vertical-Cavity Surface-Emitting Laser on Si Substrate

1993 ◽  
Author(s):  
Takashi EGAWA ◽  
Yoshiaki HASEGAWA ◽  
Tsunemasa DEGUCHI ◽  
Takashi JIMBO ◽  
Masayoshi UMENO
Keyword(s):  
Room Temperature ◽  
Cavity Surface ◽  
Si Substrate ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity ◽  
Room Temperature Operation

Characterization of AlGaAs/GaAs vertical-cavity surface-emitting laser diode grown on Si substrate by MOCVD

1997 ◽  
Vol 117-118 ◽  
pp. 771-775 ◽  
Author(s):  
Takashi Egawa ◽  
Yoshihiko Murata ◽  
Takashi Jimbo ◽  
Masayoshi Umeno
Keyword(s):  
Laser Diode ◽  
Cavity Surface ◽  
Si Substrate ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

Room-temperature pulsed operation of a 1.5- mu m GaInAsP/InP vertical cavity surface emitting laser

1992 ◽  
Vol 39 (11) ◽  
pp. 2651-2652
Author(s):  
T. Tadokoro ◽  
H. Okamoto ◽  
Y. Kohama ◽  
T. Kawakami ◽  
T. Kurokawa
Keyword(s):  
Room Temperature ◽  
Cavity Surface ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity
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