Universal energy dependence of physical and ion‐enhanced chemical etch yields at low ion energy

1989 ◽  
Vol 55 (19) ◽  
pp. 1960-1962 ◽  
Author(s):  
Christoph Steinbrüchel
Keyword(s):  
Energy Dependence ◽  
Ion Energy ◽  
Chemical Etch

Physical and Chemical Sputtering at Very Low Ion Energy: the Importance of the Sputtering Threshold

1988 ◽  
Vol 129 ◽  
Author(s):  
Christoph Steinbruchel
Keyword(s):  
Threshold Energy ◽  
Surface Binding ◽  
Ion Energy ◽  
Chemical Sputtering ◽  
Surface Binding Energy ◽  
Physical Sputtering ◽  
Chemical Etch ◽  
Ion Energies ◽  
The Difference ◽  
Physical And Chemical

ABSTRACTA variety of data for physical etching (i.e. sputtering) and for ion-enhanced chemical etching of Si and SiO2 is analyzed in the very-low-ion-energy regime. Bombardment by inert ions alone, by reactive ions, and by inert ions in the presence of reactiveneutrals is considered. In all cases the etch yield follows a square root dependence on the ion energy all the way down to the threshold energy for etching. At the same time, the threshold energy has a non-negligible effect on the etch yield even at intermediate ion energies. The difference between physical and ion-enhanced chemical etch yields can be accounted for by a reduction in the average surface binding energy of the etch products and a corresponding reduction in the threshold energy for etching. These results suggest that, in general, the selectivity for ion-enhanced etch processes relative to physical sputtering can be increased significantly at low ion energy.

Ion-energy dependence of aluminum K X-ray satellites

1972 ◽  
Vol 42 (1) ◽  
pp. 69-71 ◽  
Author(s):  
A.R. Knudson ◽  
D.J. Nagel ◽  
P.G. Burkhalter
Keyword(s):  
Energy Dependence ◽  
Ion Energy ◽  
X Ray

Ion Energy Dependence of Peel Strength of PTFE by Nitrogen Ion Irradiation

2015 ◽  
Vol 135 (1) ◽  
pp. 41-46 ◽  
Author(s):  
Ricardo Takata ◽  
Yusuke Nagasaka ◽  
Qiangshun Li ◽  
Toru Iwao ◽  
Motoshige Yumoto
Keyword(s):  
Energy Dependence ◽  
Ion Irradiation ◽  
Peel Strength ◽  
Ion Energy ◽  
Nitrogen Ion

Ion-Energy Dependence of Asymmetric Dissociation ofD2by a Two-Color Laser Field

2009 ◽  
Vol 103 (22) ◽  
Author(s):  
D. Ray ◽  
F. He ◽  
S. De ◽  
W. Cao ◽  
H. Mashiko ◽  
...  
Keyword(s):  
Energy Dependence ◽  
Laser Field ◽  
Ion Energy

SIMS yields from glasses; secondary ion energy dependence and mass fractionation

1987 ◽  
Vol 91 (1-6) ◽  
pp. 387-400 ◽  
Author(s):  
E. Urban Engstr�m ◽  
Alexander Lodding ◽  
Hans Odelius ◽  
Ulf S�dervall
Keyword(s):  
Energy Dependence ◽  
Ion Energy ◽  
Mass Fractionation ◽  
Secondary Ion

The primary ion energy dependence of the analyzing depth in SIMS measurements

1988 ◽  
Vol 194 (1-2) ◽  
pp. 217-222 ◽  
Author(s):  
Hiroyuki Yamamoto ◽  
Tadashi Kikuchi ◽  
Keiichi Furuya
Keyword(s):  
Energy Dependence ◽  
Ion Energy
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