Spectroscopic determination of the electrostatic potential profile in a plasma‐prefilled ion diode

1989 ◽  
Vol 55 (16) ◽  
pp. 1627-1629 ◽  
Author(s):  
M. D. Coleman ◽  
D. A. Hammer
Keyword(s):  
Electrostatic Potential ◽  
Potential Profile ◽  
Spectroscopic Determination ◽  
Electrostatic Potential Profile

Monotonic Electrostatic Potential Profile around Plug Region of a Tandem Mirror

1995 ◽  
Vol 64 (9) ◽  
pp. 3149-3152
Author(s):  
Isao Katanuma ◽  
Yasuhito Kiwamoto ◽  
Yoshinori Tatematsu ◽  
Kameo Ishii ◽  
Teruo Saito ◽  
...  
Keyword(s):  
Electrostatic Potential ◽  
Potential Profile ◽  
Tandem Mirror ◽  
Electrostatic Potential Profile

scholarly journals On the electrostatic potential profile in biased molecular wires

2002 ◽  
Vol 117 (23) ◽  
pp. 10837-10841 ◽  
Author(s):  
Abraham Nitzan ◽  
Michael Galperin ◽  
Gert-Ludwig Ingold ◽  
Hermann Grabert
Keyword(s):  
Electrostatic Potential ◽  
Molecular Wires ◽  
Potential Profile ◽  
Electrostatic Potential Profile

Polarization-dependent electric potential distribution across nanoscale ferroelectric Hf0.5Zr0.5O2 in functional memory capacitors

Nanoscale ◽  
2019 ◽  
Vol 11 (42) ◽  
pp. 19814-19822 ◽  
Author(s):  
Yury Matveyev ◽  
Vitalii Mikheev ◽  
Dmitry Negrov ◽  
Sergei Zarubin ◽  
Abinash Kumar ◽  
...  
Keyword(s):  
Electrostatic Potential ◽  
Electric Potential ◽  
Potential Distribution ◽  
Standing Waves ◽  
Potential Profile ◽  
Electric Potential Distribution ◽  
Non Linear ◽  
Electrostatic Potential Profile

Using standing-waves in HAXPES technique, we reveal non-linear electrostatic potential profile across nanoscale ferroelectric (FE) HfZrO4 layer in memory capacitors for both polarization directions, implying the drift of non-FE charges at interfaces.

On the Electrostatic Potential Profile Determined from Ion Endloss Spectrum

1995 ◽  
Vol 34 (Part 1, No. 10) ◽  
pp. 5827-5828 ◽  
Author(s):  
Isao Katanuma ◽  
Kameo Ishii ◽  
Yasuhito Kiwamoto ◽  
Toshiki Takahashi ◽  
Tetsuya Goto ◽  
...  
Keyword(s):  
Electrostatic Potential ◽  
Potential Profile ◽  
Electrostatic Potential Profile

PHOTOEMISSION MICROSCOPY INVESTIGATION OF BURIED p–n GaAs HOMOJUNCTIONS AND Al/n-GaAs SCHOTTKY BARRIERS

2002 ◽  
Vol 09 (01) ◽  
pp. 249-254 ◽  
Author(s):  
F. BARBO ◽  
M. BERTOLO ◽  
A. BIANCO ◽  
G. CAUTERO ◽  
S. FONTANA ◽  
...  
Keyword(s):  
Cross Section ◽  
Electrostatic Potential ◽  
Schottky Barriers ◽  
Potential Profile ◽  
Prototype System ◽  
Semiconductor Interfaces ◽  
Microscopy Investigation ◽  
Schottky Junctions ◽  
Electrostatic Potential Profile

A natural application of the emerging technique of photoemission microscopy to the study of semiconductor interfaces involves measuring a device in cross section to directly determine heterojunction parameters. We present here results on p–n GaAs homojunctions, which served as a prototype system to demonstrate the applicability of this technique to buried semiconductor interfaces. We also describe preliminary measurements of the electrostatic potential profile across Al/GaAs Schottky junctions.

Sign in / Sign up

Export Citation Format

Share Document