Electrostatic potential profile and nonlinear current in an interacting one-dimensional molecular wire

2003 ◽  
Vol 115 (5-6) ◽  
pp. 533-542 ◽  
Author(s):  
S. Lakshmi ◽  
Swapan K. Pati
1995 ◽  
Vol 64 (9) ◽  
pp. 3149-3152
Author(s):  
Isao Katanuma ◽  
Yasuhito Kiwamoto ◽  
Yoshinori Tatematsu ◽  
Kameo Ishii ◽  
Teruo Saito ◽  
...  

2002 ◽  
Vol 117 (23) ◽  
pp. 10837-10841 ◽  
Author(s):  
Abraham Nitzan ◽  
Michael Galperin ◽  
Gert-Ludwig Ingold ◽  
Hermann Grabert

Nanoscale ◽  
2019 ◽  
Vol 11 (42) ◽  
pp. 19814-19822 ◽  
Author(s):  
Yury Matveyev ◽  
Vitalii Mikheev ◽  
Dmitry Negrov ◽  
Sergei Zarubin ◽  
Abinash Kumar ◽  
...  

Using standing-waves in HAXPES technique, we reveal non-linear electrostatic potential profile across nanoscale ferroelectric (FE) HfZrO4 layer in memory capacitors for both polarization directions, implying the drift of non-FE charges at interfaces.


1995 ◽  
Vol 34 (Part 1, No. 10) ◽  
pp. 5827-5828 ◽  
Author(s):  
Isao Katanuma ◽  
Kameo Ishii ◽  
Yasuhito Kiwamoto ◽  
Toshiki Takahashi ◽  
Tetsuya Goto ◽  
...  

2002 ◽  
Vol 09 (01) ◽  
pp. 249-254 ◽  
Author(s):  
F. BARBO ◽  
M. BERTOLO ◽  
A. BIANCO ◽  
G. CAUTERO ◽  
S. FONTANA ◽  
...  

A natural application of the emerging technique of photoemission microscopy to the study of semiconductor interfaces involves measuring a device in cross section to directly determine heterojunction parameters. We present here results on p–n GaAs homojunctions, which served as a prototype system to demonstrate the applicability of this technique to buried semiconductor interfaces. We also describe preliminary measurements of the electrostatic potential profile across Al/GaAs Schottky junctions.


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