Doppler profile measurement of Ar and Ar+translational energies in a divergent magnetic field electron cyclotron resonance source

1989 ◽  
Vol 55 (1) ◽  
pp. 30-32 ◽  
Author(s):  
John S. McKillop ◽  
John C. Forster ◽  
William M. Holber
Keyword(s):  
Magnetic Field ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Profile Measurement ◽  
Field Electron ◽  
Doppler Profile

Status of the pulsed magnetic field electron cyclotron resonance ion source

1994 ◽  
Vol 65 (4) ◽  
pp. 1078-1080 ◽  
Author(s):  
C. Mühle ◽  
U. Ratzinger ◽  
W. Bleuel ◽  
G. Jöst ◽  
K. Leible ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Ion Source ◽  
Electron Cyclotron ◽  
Pulsed Magnetic Field ◽  
Field Electron

Pulsed magnetic field‐electron cyclotron resonance ion source operation

1996 ◽  
Vol 67 (3) ◽  
pp. 1331-1333 ◽  
Author(s):  
C. Mühle ◽  
U. Ratzinger ◽  
G. Jöst ◽  
K. Leible ◽  
S. Schennach ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Ion Source ◽  
Electron Cyclotron ◽  
Pulsed Magnetic Field ◽  
Field Electron ◽  
Source Operation

Dependence of the a-Si:H Defect Density of States on the Magnetic Field Profile of an Electron Cyclotron Resonance Microwave Plasma

1992 ◽  
Vol 258 ◽  
Author(s):  
F.S. Pool ◽  
J.M. Essick ◽  
Y.H. Shing ◽  
R.T. Mather
Keyword(s):  
Magnetic Field ◽  
Density Of States ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Microwave Plasma ◽  
Defect Density ◽  
Electron Cyclotron ◽  
Field Profile ◽  
Magnetic Field Profile ◽  
The Magnetic Field

ABSTRACTThe magnetic field profile of an electron cyclotron resonance (ECR) microwave plasma was systematically altered to determine subsequent effects on a-Si:H film quality. Films of a-Si:H were deposited at pressures of 0.7 mTorr and 5 mTorr with a H2/SiH4 ratio of approximately three. The mobility gap density of states ND, deposition rate and light to dark conductivity were determined for the a-Si:H films. This data was correlated to the magnetic field profile of the plasma, which was characterized by Langmuir probe measurements of the ion current density. By variation of the magnetic field profile ND could be altered by more than an order of magnitude, from 1×1016 to 1×1017 at 0.7 mTorr and 1×1016 to 5×1017 at 5 mTorr. Two deposition regimes were found to occur for the conditions of this study. Highly divergent magnetic fields resulted in poor quality a-Si:H, while for magnetic field profiles defining a more highly confined plasma, the a-Si:H was of device quality and relatively independent of the magnetic field configuration.

Design of a small electron cyclotron resonance ion source with partially pulsed magnetic field

2000 ◽  
Vol 71 (2) ◽  
pp. 1113-1115 ◽  
Author(s):  
M. Oyaizu ◽  
E. Tojyo ◽  
S. C. Jeong ◽  
H. Ishiyama ◽  
H. Miyatake ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Ion Source ◽  
Electron Cyclotron ◽  
Pulsed Magnetic Field

Spatially resolved ion velocity distributions in a diverging field electron cyclotron resonance plasma reactor

1990 ◽  
Vol 57 (12) ◽  
pp. 1188-1190 ◽  
Author(s):  
Dennis J. Trevor ◽  
Nader Sadeghi ◽  
Toshiki Nakano ◽  
Jacques Derouard ◽  
Richard A. Gottscho ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Plasma Reactor ◽  
Electron Cyclotron ◽  
Electron Cyclotron Resonance Plasma ◽  
Spatially Resolved ◽  
Field Electron ◽  
Ion Velocity ◽  
Resonance Plasma
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