A stablen‐channel indium phosphide field‐effect transistor with an amorphous hydrogenated silicon gate

1989 ◽  
Vol 55 (10) ◽  
pp. 999-1001 ◽  
Author(s):  
E. Roditi ◽  
A. A. Iliadis ◽  
A. Christou
Keyword(s):  
Indium Phosphide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Effect Transistor

A Stable n-Channel Indium Phosphide Field-Effect Transistor with an Amorphous Hydrogenated Silicon Gate

1989 ◽  
Vol 160 ◽  
Author(s):  
E. Roditi ◽  
A.A. Iliadis ◽  
A. Christou
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Metal Insulator ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Gate System ◽  
Effect Transistor ◽  
Current Drift ◽  
Inp Surface

AbstractInP field-effect transistors fabricated with an amorphous hydrogenated Si (a-Si:H) gate resulted in metal-insulator-like FET characteristics with no observable current drift and a transconductance of 30–38 mS/mm. The high stability of this gate system is attributed to the low temperature of deposition and the hydrogen passivation of the InP surface.

Performance analysis of indium phosphide channel based sub-10 nm double gate spin field effect transistor

2020 ◽  
Vol 384 (19) ◽  
pp. 126498 ◽  
Author(s):  
Gul Faroz A. Malik ◽  
Mubashir A. Kharadi ◽  
Farooq A. Khanday ◽  
Khurshed A. Shah
Keyword(s):  
Performance Analysis ◽  
Indium Phosphide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Double Gate ◽  
Spin Field ◽  
Effect Transistor

An indium phosphide diffused junction field effect transistor

1990 ◽  
Author(s):  
C.R. Zeisse ◽  
R. Nguyen ◽  
T.T. Vu ◽  
L.J. Messick ◽  
K.L. Moazed
Keyword(s):  
Indium Phosphide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

Device Performance and Strain Effect of Sub-5 nm Monolayer InP Transistors

2022 ◽  
Author(s):  
Linqiang Xu ◽  
Ruge Quhe ◽  
Qiuhui Li ◽  
Shiqi Liu ◽  
Jie Yang ◽  
...  
Keyword(s):  
Indium Phosphide ◽  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Strain Effect ◽  
Device Performance ◽  
Saturation Velocity ◽  
Effect Transistor

Indium phosphide (InP) has higher electron mobility, electron saturation velocity, and drain current than silicon (Si), and the ultra-thin (UT) InP field-effect transistor (FET) probably possesses a better device performance...

A stable indium-phosphide diffused junction field-effect transistor with high gain and low leakage

1989 ◽  
Vol 10 (8) ◽  
pp. 358-360 ◽  
Author(s):  
C.R. Zeisse ◽  
R. Nguyen ◽  
L.J. Messick ◽  
P. Saunier ◽  
K.L. Moazed
Keyword(s):  
Indium Phosphide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Gain ◽  
Low Leakage ◽  
Effect Transistor

Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer

2010 ◽  
Vol E93-C (5) ◽  
pp. 540-545 ◽  
Author(s):  
Dong Seup LEE ◽  
Hong-Seon YANG ◽  
Kwon-Chil KANG ◽  
Joung-Eob LEE ◽  
Jung Han LEE ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate

2014 ◽  
Vol E97.C (7) ◽  
pp. 677-682
Author(s):  
Sung YUN WOO ◽  
Young JUN YOON ◽  
Jae HWA SEO ◽  
Gwan MIN YOO ◽  
Seongjae CHO ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

Biosensor Based on Ion-Sensitive Field-Effect Transistor Using Minimum Contact to Float-ing Gate

2019 ◽  
Vol 24 (4) ◽  
pp. 407-414
Author(s):  
Oksana V. Gubanova ◽  
◽  
Evgeniy V. Kuznetsov ◽  
Elena N. Rybachek ◽  
Alexander N. Saurov ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor
Sign in / Sign up

Export Citation Format

Share Document