Phase coherence length of electron waves in narrow AlGaAs/GaAs quantum wires fabricated by focused ion beam implantation

1989 ◽  
Vol 54 (21) ◽  
pp. 2103-2105 ◽  
Author(s):  
Toshiro Hiramoto ◽  
Kazuhiko Hirakawa ◽  
Yasuhiro Iye ◽  
Toshiaki Ikoma
Keyword(s):  
Coherence Length ◽  
Focused Ion Beam ◽  
Quantum Wires ◽  
Ion Beam ◽  
Phase Coherence ◽  
Ion Beam Implantation

Electron scatterers near the boundary in AlGaAs/GaAs quantum wires fabricated by focused ion beam implantation

1992 ◽  
Vol 11 (3) ◽  
pp. 261-264 ◽  
Author(s):  
M. Yamada ◽  
K. Hirakawa ◽  
T. Odagiri ◽  
T.J. Thornton ◽  
T. Ikoma
Keyword(s):  
Focused Ion Beam ◽  
Quantum Wires ◽  
Ion Beam ◽  
Ion Beam Implantation

Focused Ion Beam Implantation of GaAs-GaAlAs Quantum Well Structures

1988 ◽  
Vol 126 ◽  
Author(s):  
P. M. Petroff ◽  
Xueyu Qian ◽  
Per Olof Holtz ◽  
R. J. Simes ◽  
J. H. English ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Focused Ion Beam ◽  
Quantum Wires ◽  
Ion Beam ◽  
Damage Distribution ◽  
Quantum Well Structures ◽  
Ion Beam Implantation ◽  
Dose Effects

ABSTRACTThe effects of Implantation Enhanced Interdiffusion (IEI) in GaAs-GaAlAs quantum well structures are investigated. A Focused Ion Beam (FIB) source is used to implant narrow lines (500Å wide) with Ga+ ions. IEI in these structures is characterized by low temperature Cathodoluminescence. The dose effects and annealing kinetics dependence on IEI are presented. An unusual damage distribution which produces IEI deep below the surface is observed for the case of FIB implant. The possible origins of this effect and the limits of IEI for processing quantum wires and boxes are discussed.

Fabrication of Quantum Wires by Ga Focused-Ion-Beam Implantation and Their Transport Properties

1990 ◽  
Vol 29 (Part 1, No. 1) ◽  
pp. 48-52 ◽  
Author(s):  
Syunji Nakata ◽  
Syoji Yamada ◽  
Yoshiro Hirayama ◽  
Tadashi Saku ◽  
Yoshiji Horikoshi
Keyword(s):  
Transport Properties ◽  
Focused Ion Beam ◽  
Quantum Wires ◽  
Ion Beam ◽  
Ion Beam Implantation

Conductance Oscillations in Hopping Conduction Systems Fabricated by Focused Ion Beam Implantation

1997 ◽  
Vol 36 (Part 1, No. 6B) ◽  
pp. 4046-4048 ◽  
Author(s):  
Hiroki Kondo ◽  
Hirotaka Iwano ◽  
Osamu Nakatsuka ◽  
Kazutaka Kaga ◽  
Shigeaki Zaima ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Hopping Conduction ◽  
Ion Beam Implantation
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