Electronic structure modification induced by ion irradiation during film growth of Cu and Pd

1988 ◽  
Vol 53 (25) ◽  
pp. 2480-2482 ◽  
Author(s):  
F. Parmigiani ◽  
E. Kay
ChemCatChem ◽  
2016 ◽  
Vol 8 (15) ◽  
pp. 2423-2423
Author(s):  
Minjune Kim ◽  
Yena Kim ◽  
Yeonjoon Kim ◽  
Yongmin Kwon ◽  
Kyungrok Ham ◽  
...  

1993 ◽  
Vol 316 ◽  
Author(s):  
J. Ullmann ◽  
A. Weber ◽  
U. Falke

ABSTRACTFor a deeper understanding of the creation of carbon films the hydrogen-free ion assisted evaporation (IAE) method with neon species was used. Variation of the ion parameters energy and ion to neutral arrival ratio, delivering the necessary energy for modification of the film growth, results in different microstructures investigated with EELS, HRTEM and TED as well as different microhardnesses measured by dynamical Vickers indentation. A possible film growth mechanism is proposed based on an ion etching of mainly sp2-bonded carbon surface atoms and on defect dominated structure modification below the surface depending on the ion energy


2019 ◽  
Vol 7 (6) ◽  
pp. 6412-6421 ◽  
Author(s):  
Yong Tao ◽  
Wenqin Zhang ◽  
Neng Li ◽  
Fazhou Wang ◽  
Shuguang Hu

1993 ◽  
Vol 126 (1-4) ◽  
pp. 237-241 ◽  
Author(s):  
L. Douillard ◽  
E. Dooryhee ◽  
J-P. Duraud ◽  
F. Jollet ◽  
R. A. B. Devine

2009 ◽  
Vol 114 (1) ◽  
pp. 506-515 ◽  
Author(s):  
Yingke Zhou ◽  
Timothy Holme ◽  
Joe Berry ◽  
Timothy R. Ohno ◽  
David Ginley ◽  
...  

2017 ◽  
Vol 229 ◽  
pp. 1-6 ◽  
Author(s):  
Yuan Zhao ◽  
Xiaoliang Liu ◽  
Lu Lyu ◽  
Lin Li ◽  
Wenjun Tan ◽  
...  

2011 ◽  
Author(s):  
Sandeep Singh ◽  
Ganesh Adhikary ◽  
D. Biswas ◽  
Kalobaran Maiti ◽  
C. Biswas ◽  
...  

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